Patent classifications
H01J37/3222
Substrate processing apparatus
A film deposition apparatus includes a process chamber, and a turntable in the process chamber to receive a substrate. An exhaust port is provided outside the turntable to evacuate the process chamber. An exhaust box is provided in a space between a ceiling surface of the process chamber and the surface of the turntable so as to surround a certain region along the circumferential direction and a radial direction by side walls so as to include a region upstream of the exhaust port in a rotational direction of the turntable. A gas supply unit to supply a gas into the exhaust box is provided. The exhaust box includes an outflow port in a side wall closest to the exhaust port such that a conductance of a gas flowing from the exhaust box increases with increasing distance from the exhaust port.
Method of post-deposition treatment for silicon oxide film
A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H.sub.2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.
Device for measuring plasma ion density and apparatus for diagnosing plasma using the same
Disclosed herein is a device for measuring a plasma ion density, which includes a transceiver antenna configured to apply and receive a microwave, of which a frequency is varied, to and from plasma, and a frequency analyzer configured to analyze a frequency of the microwave received from the transceiver antenna and measure a cut-off frequency, wherein the frequency of the microwave applied to the plasma is varied in the range of 100 kHz to 500 MHz.
Multi-port Phase Compensation Nested Microwave-plasma Apparatus for Diamond Film Deposition
Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.
MONOPOLE ANTENNA ARRAY SOURCE FOR SEMICONDUCTOR PROCESS EQUIPMENT
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.
Modular microwave source with local lorentz force
Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.
DEVICE FOR COATING CONTAINERS WITH A BARRIER LAYER, AND METHOD FOR HEATING A CONTAINER
The present invention relates to a device for coating containers with a barrier layer having at least one plasma chamber, which encloses at least one treatment space, in which at least one container with a container interior can be inserted and can be positioned on the treatment space, wherein a gas lance is provided which can be introduced into the container interior and which further acts as microwave antenna, with the plasma chamber being designed to be capable at least of partial evacuation and being designed to fill the container interior at least partially with a plasma and a process gas. The device is designed such that the container can be preheated by means of a plasma, more particularly by means of a microwave plasma, using a noble gas which can be introduced into the container interior through the gas lance.
Monopole antenna array source with gas supply or grid filter for semiconductor process equipment
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.
APPARATUS AND METHOD FOR PLASMA PROCESSING
A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.
PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND DIELECTRIC WINDOW
A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.