A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

There is provided a tuner that forms a part of an electromagnetic wave transmission path for supplying electromagnetic waves from a power supply to a load, and that matches an impedance on a power supply side and an impedance on a load side, comprising: a coaxial line including a cylindrical inner conductor and a cylindrical outer conductor disposed coaxially outside the inner conductor; an annular first dielectric constant changing material disposed in a space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; an annular second dielectric constant changing material spaced apart from the first dielectric constant changing material in a line length direction of the coaxial line, disposed in the space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; a first power supply portion configured to supply power to the first dielectric constant changing material; and a second power supply portion configured to supply power to the second dielectric constant changing material.

Plasma showerheads with improved gas uniformity are disclosed. One or more embodiment of the disclosure provides a plasma showerhead with angled gas nozzles. Some embodiments of the disclosure have gas nozzles angled by a vertical offset angle and/or a directional offset angle. None of the gas channels and/or the gas nozzles intersect with the plasma regions of the showerhead.

A substrate processing apparatus includes a chamber having a sidewall; a susceptor mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material, and an antenna disposed on the upper dome to generate inductively coupled plasma. The antenna includes two one-turn unit antennas, the wo one-turn unit antennas each has an upper surface and a lower surface and are disposed to overlap each other on the upper surfaces and the lower surfaces of the two one-turn unit antennas, the two one-turn unit antennas are connected in parallel and are connected to a radio-frequency (RF) power supply, and a width direction of each of the one-turn unit antennas stands upright vertically.

Embodiments presented provide for a distributed ground single antenna ion source used in scientific experimentation.

A plasma processing apparatus includes: a vacuum chamber that includes a plasma processing chamber in which a substrate is to be plasma-processed and that can exhaust an inside of the plasma processing chamber to vacuum; and a microwave power supply unit that supplies a microwave power to the vacuum chamber via a circular waveguide. The vacuum chamber includes: a parallel flat plate line portion that is connected to the circular waveguide and receives a microwave power propagated from the circular waveguide; a ring resonator unit that is disposed on an outer periphery of the parallel flat plate line portion and receives the microwave power propagated from the parallel flat plate line portion; a cavity portion that receives a microwave power radiated from a slot antenna formed in the ring resonator unit; and a microwave introduction window that separates the cavity portion from the plasma processing chamber. The parallel flat plate line portion includes a phase adjusting unit for adjusting a phase of microwaves propagating from the parallel flat plate line portion to the ring resonator unit at a boundary portion with the ring resonator unit.

A substrate treating apparatus is provided to provide heating and plasma treatment of a substrate in a single device, and the substrate treating apparatus includes a treatment container in which a substrate is accommodated, a support member supporting the substrate in the treatment container, a plasma providing unit including an electrode generating plasma within the treatment container, and a microwave introducing unit connected to a microwave generating unit and introducing microwaves into the treatment container.

There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators.

A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.