Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side, a first dielectric adjacent a second side of the powered electrode and at least one second dielectric adjacent the first dielectric on a side opposite the first dielectric. The sum of the thicknesses of the first dielectric and each of the second dielectrics is in the range of about 10 mm to about 17 mm.

A plasma processing apparatus includes: a processing container formed by assembling a container upper portion having an upper side wall and a container lower portion having a lower side wall; a stage provided in the container lower portion of the processing container; and a peripheral introduction part configured to be an assembly, configured to be sandwiched between the upper side wall and the lower side wall, and configured to provide a plurality of gas discharge ports arranged in the circumferential direction with respect to an axis passing through a center of the stage, the assembly in which at least two members are assembled, the at least two members forming a gas flow path extending in a circumferential direction with respect to the axis in an interior thereof, in which the peripheral introduction part, the container upper portion and the container lower portion are thermally and electrically connected to each other.

An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic wave in the first waveguide, a coaxial conversion part causes propagation of the electromagnetic waves dispersed by the dispersion part to direct to a side of the dielectric window, and a front surface of the dielectric window does not have irregularities.

A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient 0.2 cm.sup.1 at 10.6 m; and a dielectric loss coefficient at 145 GHz, of tan 210.sup.4.

A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

A dielectric window for a process chamber is provided. The dielectric window includes a disc-shaped body consisting of a first dielectric material having a first dielectric constant. An annular portion consisting of a second dielectric material having a second dielectric constant greater than the first dielectric constant is seated in the disc-shaped body. The dielectric window has a substantially constant thickness over a process region of the process chamber. The process region is an interior region of the process chamber in which a plasma is generated during processing of a substrate in the process chamber. The seating of the annular portion in the disc-shaped body is configured to maintain the substantially constant thickness of the dielectric window.

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.

A pressure barrier comprising a window with a first side and a second side, a main section comprising a length, a first end, and a second end opposite the first end, a first gradient compression section adjacent to the first end of the main section, and a second gradient decompression section adjacent to the second end of the main section is described. A pressure difference can be formed between the first and second side of the window. The window can comprise a dielectric material, where an average dielectric constant of the gradient compression section increases toward the main section, and an average dielectric constant of the gradient decompression section decreases away from the main section. A microwave propagating in a propagation direction can enter the pressure barrier at the gradient compression section and exit the pressure barrier through the gradient decompression section.