A plasma processing apparatus includes: a chamber; a stage provided in the chamber; a microwave transmission window provided on a wall surface of the chamber; a microwave supply configured to supply microwaves into the chamber via the microwave transmission window; a shower plate configured to partition an interior of the chamber into a plasma generation space, which is a region where the microwave transmission window is disposed, and a processing space, which is a region where the stage is disposed; and a protrusion protruding from the shower plate into the plasma generation space and including a conductor in at least a portion of the protrusion.

An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.

The apparatus includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, a gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma. The microwave application unit may include first power supply for applying a first microwave, a support plate having a groove formed on an upper surface thereof and combined with the process chamber above the support unit to define the treating space, a first transmission plate inserted into the groove to radiate the first microwave to the treating space, and a first waveguide disposed to overlap with an upper portion of the first transmission plate and coupled to the first power supply, wherein a plurality of grooves may be formed along a circumferential direction in an edge region of the support plate.

Disclosed is a plasma processing apparatus for performing a plasma processing on a workpiece. The apparatus includes: a processing container that accommodates the workpiece; a dielectric window that is provided to seal an opening in an upper portion of the processing container and transmits microwaves into the processing container; and a slot plate that is provided on an upper surface of the dielectric window and has a plurality of slots formed to radiate the microwaves to the dielectric window. The dielectric window includes a protrusion protruding downward from a lower surface of the dielectric window at a position corresponding to each of the slot, and a width of the protrusion is λ/4±λ/8 with respect to a wavelength λ of the microwaves.

In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

A plasma processing apparatus includes: a processing container; a ceiling wall forming a part of the processing container and including an opening; and a transmission window configured to close the opening, wherein the opening under the transmission window is formed as a recess portion, wherein the recess portion is a supply port for supplying electromagnetic waves from the transmission window into the processing container, wherein first gas supply holes are formed on a lower surface of the ceiling wall, and wherein second gas supply holes are formed on an inner surface of the recess portion.

Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna, and a method of manufacturing method of a semiconductor device. The antenna includes a lower ring having a plurality of output slits, and an upper ring disposed on the lower ring. The upper ring has an input slit transmitting microwave power from an outside of the upper ring onto the lower ring. The upper ring is configured to rotate with respect to the lower ring.

A plasma processing apparatus includes a processing container including an opening provided in a ceiling wall of the processing container, and a microwave radiation source. The microwave radiation source includes a slot antenna including a slot and configured to radiate microwaves from the slot, and a transmission window configured to close the opening and to radiate the microwaves from the slot into the processing container. The transmission window includes a first surface including a skirt which suspends to cover a side wall of the opening, and a second surface which is an opposite surface to the first surface and faces the slot antenna with a gap between the slot antenna and the second surface.

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.