A plasma processing method for efficiently processing a wafer using plasma which includes two processing steps and a bridging step between the two processing steps. The plasma processing method includes: supplying a processing-use gas into a processing chamber during a processing step; supplying a bridging-use gas into the processing chamber during a bridging step; switching the supply of the processing-use gas from a first gas supply unit and the bridging-use gas from a second gas supply unit to the processing chamber in transition between the two processing steps and the bridging step; and regulating a flow rate of the bridging-use gas to be supplied during the bridging step to a flow rate regarded equal to a supply amount of the processing-use gas to be supplied during a succeeding processing step out of the two processing steps.

To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

A plasma processing apparatus for processing a workpiece with plasma includes a stage configured to place thereon the workpiece, a waveguide part configured to introduce plasma-generating electromagnetic waves in a VHF band into the plasma processing apparatus, and a dielectric window configured to transmit the electromagnetic waves introduced through the waveguide part to a plasma processing space formed on a workpiece placement side of the stage. The dielectric window is an annular member disposed so as to face a plasma processing space side of the stage and includes multiple convex portions, which protrude toward the stage and are arranged on the stage side along a circumferential direction at regular intervals. The convex portions each has a circumferential width of ⅛ to ⅜ of the wavelength of the electromagnetic waves inside the dielectric window.

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

A plasma processing apparatus includes: a stage on which a substrate is placed; a chamber in which the stage is provided; a plasma source configured to introduce a microwave into the chamber from a ceiling wall of the chamber so as to generate surface wave plasma inside the chamber; and at least one gas discharger configured to discharge a gas toward the stage. The at least one gas discharger is configured to adjust a gas discharge position in a predetermined plane and a distance from a center of the stage to the gas discharge position by changing a gas supply path existing inside the at least one gas discharger.

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

A substrate treating apparatus is provided to provide heating and plasma treatment of a substrate in a single device, and the substrate treating apparatus includes a treatment container in which a substrate is accommodated, a support member supporting the substrate in the treatment container, a plasma providing unit including an electrode generating plasma within the treatment container, and a microwave introducing unit connected to a microwave generating unit and introducing microwaves into the treatment container.

There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.