A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.

Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.

A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.

There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H.sub.2O and can provide at least about 30 cfm of air.

A plasma generating unit capable of improving in-surface uniformity of plasma and a plasma processing apparatus using the same are provided. The plasma generating unit provided in the plasma processing apparatus includes a dielectric window 16; a slot plate 20 provided on the dielectric window 16; and a coaxial waveguide electrically connected to the slot plate 20 and configured to transmit a microwave. The coaxial waveguide includes an inner conductor 31; and an outer conductor 32 configured to surround the inner conductor 31. The plasma generating unit further includes a pressing component PM configured to elastically press the inner conductor 31 toward the slot plate.