Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM.sub.011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.

Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.

A hybrid plasma source and an operation method thereof, the hybrid plasma source is formed by combining the mechanisms of microwave plasma and transformer coupled plasma for gas dissociation and chemical activation. A reaction chamber of the hybrid plasma source is composed of two microwave resonant chambers and sets of hollow metal tubes, after a high-intensity electric field is generated by the microwave resonant chambers to generate a plasma, a high power and high density plasma generated by the highly-efficient coupling mechanism of the transformer coupled plasma is capable of greatly improving a gas conductance, each set of the hollow metal tubes is driven by each set of ferrite transformer magnetic cores to disperse power, which reduces an energy density of each of the hollow metal tubes and reduces occurrence of plasma entering a contraction mode from a diffusion mode, thereby further improving an operable gas flow rate.

A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.

A plasma unit for a mass spectroscopy machine generates plasma using a microwave coupled dielectric ring held within a microwave cavity employing part of the mass spectrometer structure to define the microwave cavity, thereby permitting improved proximity of the plasma and plasma ionized sample material to the mass spectrometer aperture.

Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

There is a plasma processing apparatus comprising: a processing chamber configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface facing the processing space; and an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric, wherein the dielectric includes: a cell serving as a plasma generation space on the first surface side, a plurality of grooves formed on a second surface opposite to the first surface, the grooves surrounding the cell without communicating with the cell; and resonators including C-shaped ring members made of conductors inserted into the plurality of grooves, wherein the resonators are capable of resonating with magnetic field components of the electromagnetic waves and have a size smaller than a wavelength of the electromagnetic wave.

A plasma processing apparatus comprises a processing chamber accommodating a substrate, and defining a processing space by an upper wall, a side wall, and a lower wall, a microwave generator configured to generate a microwave for generating plasma, a plurality of microwave radiators provided above the upper wall, and configured to radiate the microwave toward the processing chamber, a plurality of microwave transmission windows provided at positions corresponding to the plurality of microwave radiators in the upper wall, and formed of a dielectric, and a plurality of resonator array structures disposed on lower surfaces of the plurality of microwave transmission windows, respectively. The resonator array structures are formed by arranging a plurality of resonators that are capable of resonance with a magnetic field component of the microwave and are smaller in size than a wavelength of the microwave.

Provided is a plasma processing apparatus comprising a processing container configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface thereof facing the processing space; an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric; and a resonator array structure located along the first surface of the dielectric within the processing container, wherein the resonator array structure includes a base plate having a groove on a surface on the processing space side; a plurality of resonators capable of resonating with a magnetic field component of the electromagnetic wave and having a size smaller than a wavelength of the electromagnetic wave; and a pressing member configured to press the plurality of resonators.