Embodiments disclosed herein include an applicator for microwave plasma generation. In an embodiment, the applicator comprises a resonator body with a hole into an axial center of the resonator body, where the resonator body comprises a first dielectric material. In an embodiment, the applicator further comprises a pin inserted into the hole, where the pin is an electrically conductive material. In an embodiment, the applicator further comprises a plate under the resonator body, where the plate comprises a second dielectric material that is different than the first dielectric material.

Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator.

A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20 C. to 145 C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m.sup.2 to 3.5 kW/m.sup.2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

A plasma generator comprises a radio frequency power source, a coaxial cavity resonator assembly, and a direct current power source. The radio frequency power source provides a voltage supply of radio frequency power having a first ratio of power over voltage. The resonator assembly includes a center conductor coupled to the radio frequency power source, and also includes a virtual short circuit. The direct current power source is connected to the center conductor at the virtual short circuit, and provides a voltage supply of direct current power having a second ratio of power over voltage that is less than the first ratio.

A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.

Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.

Disclosed is a chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window is disposed in the resonating cavity, intermediate a top and bottom of the resonating cavity, separating the resonating cavity into an upper zone and a plasma zone. The resonating cavity is configured to propagate microwaves from the upper zone through the microwave transparent window into the plasma zone. A noise cancelling antenna is disposed in a non-weight bearing manner through an opening in the microwave transparent window. Also disclosed is a method that includes (a) providing the above-described CVD reactor; (b) feeding a carbon bearing reactive gas into the plasma zone; and (c) concurrent with step (b), feeding microwaves into the resonant cavity thereby forming in the plasma zone a plasma that causes a diamond film to form in the plasma zone.

A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20 C. to 145 C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m.sup.2 to 3.5 kW/m.sup.2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Systems and methods for coating particles using PE-ALD and a rotary reactor tube are disclosed. The reactor tube is part of a reactor tube assembly that can rotate and move axially so that it is operably disposed relative to a plasma-generating device. The plasma-generating device has an active state that generates a plasma from a precursor gas and an inactive state that passes the precursor gas without forming a plasma. The reactor tube resides in a chamber that has an open position for accessing the reactor tube and a closed position that supports a vacuum. An output end of the plasma-generating device resides immediately adjacent or within an input section of the reactor tube. This configuration avoids the need for an active portion of the plasma-generating device residing adjacent an outer surface of the reactor tube.

Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within the vacuum chamber for sputtering a material onto a wafer. The system can include a resonant structure formed by an antenna and a plurality of capacitors. The resonant structure can be configured to provide a pulsed output at a resonant frequency. The resonant structure can be configured to generate, via the antenna and based on the pulsed output, a plasma between the target and a location of the wafer to ionize the material sputtered from the target.