A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Provided is a manufacturing method of an interior member of a plasma processing apparatus, which improves processing yield. The interior member is disposed inside a processing chamber of the plasma processing apparatus and includes, on a surface thereof, a film of a material having resistance to plasma. The manufacturing method includes: a step of moving a gun by a predetermined distance along the surface of the interior member to spray the material to form the film, and disposing a test piece having a surface having a shape simulating a surface shape of the interior member within a range of the distance within which the gun is moved and forming the film of the material on the surface of the test piece; and a step of adjusting, based on a result of detecting a crystal size of the film on the surface of the test piece and presence or absence of a residual stress or inclusion of a contaminant element, a condition of forming the film on the surface of the interior member by the gun.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface at a side opposite to the first surface, and at least one hole extending through the first and second surfaces. The ceramic layer is a ceramic layer located on the base material. The at least one hole includes a first hole part continuous with the first surface. The ceramic layer includes a first part and a second part. The first part is located on the first surface. The first part is exposed. The second part is located on the first hole part. An arithmetical mean height Sa of a surface of the first part is less than an arithmetical mean height Sa of a surface of the second part.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a composite structure. The composite structure includes a base material and a ceramic layer. The ceramic layer includes a first part located on a surface of the base material and is exposed. The composite structure includes a through-hole extending through the base material and the ceramic layer. The through-hole extends in a first direction. The through-hole includes a first hole region, a second hole region and a third hole region. The first hole region is continuous with a surface of the first part. The third hole region is positioned between the first hole region and the second hole region in the first direction. A hardness of the third hole region is greater than a hardness of the first hole region.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer located on the base material. The base material includes a first surface, a second surface, and at least one hole extending through the first and second surfaces. The at least one hole includes a first, a second and a third hole part. The first hole part is continuous with the first surface and is oblique. The second hole part is between the second surface and the first hole part. The third hole part is between the first hole part and the second hole part and is oblique. The ceramic layer includes a first part located on the first surface and a second part located on the first hole part.

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.