Provided is a method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container. The method includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

Components and processes are disclosed herein for managing non-volatile and/or low-volatility byproduct materials that are generated within a plasma processing region of a plasma processing chamber during performance of various plasma-based processes on a substrate. The components include a top window structure, a liner structure, an edge ring structure, a focus ring structure, a ground ring structure, a substrate access port shield, an insert liner for a port opening in a chamber wall, and an exhaust baffle assembly for positioning within an exhaust channel connected to the chamber. One or more process-exposed surface(s) of the various components are subjected to a surface roughening/texturizing process to impart a surface roughness and/or engineered topography to the process-exposed surface that promotes adhesion and retention of plasma process byproduct materials. The various components with roughened/texturized process-exposed surface(s) are configured for use in lead zirconate titanate (PZT) film etching and/or platinum (Pt) film etching processes.

A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

A system to provide a texture to a surface of a component for use in a semiconductor processing chamber is provided. The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in a range between about 345 nm and about 1100 nm across the surface of the component to form a plurality of features on the component.

Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.

A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.