H01J37/32761

METHOD FOR PRODUCING A COATED PERFORATED STEEL STRIP

The invention relates to a method for producing perforated steel strips with a metallic coating, wherein metal strips and in particular sheet steel strips with a perforation or hole pattern are fed to and guided through a coating device in which the sheet metal strip is continuously PVD-coated with a vapor flow.

Method and device for producing uniform films on moving substrates and films produced in this way

The invention relates to the deposition of optical precision films with high uniformity, precision, particle freedom and low absorption on the substrate. For this purpose, a method and a device are proposed. The approach is the use of target materials and also possibly of surfaces in the sputtering field. Particularly high uniformity and also particularly low residual absorption are achieved with these materials. The invention is suitable for the production of optical thin-film filters, as are used for example in laser material machining, laser components, optical sensors for measuring technology, or in medical diagnostics.

Plasma generating device

A plasma generating device includes a first plasma electrode and a counter electrode facing each other. The first plasma electrode extends in a lateral direction and includes two projections. Each of the two projections protrudes from the first plasma electrode in the direction of the counter electrode over a predetermined distance. The plasma generating device further includes a preload mechanism adapted for urging each of said two projections of the first plasma electrode against the counter electrode. The two projections cooperatively define a plasma gap between the first plasma electrode and the counter electrode. The counter electrode includes a support surface facing said plasma gap. The support surface is substantially flat along the plasma gap.

METHOD AND APPARATUS FOR SAVING ENERGY WHILE INCREASING THE CONVEYING SPEED IN VACUUM COATING PLANTS

Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

Device and method for sputtering and depositing metal on surface of magnetic powder materials

A device and method for sputtering and depositing metal on the surface of magnetic powder materials utilizes a vacuum chamber, a vacuum pump set, a magnetron sputtering target, a cathode ion source, a water-cooled anode, and a sample holding component arranged in the vacuum chamber. The sample holding component is a sample roller, an axis of the sample roller is arranged in a horizontal direction, the sample roller can rotate around the axis thereof. Two ends of the sample roller are open, and the sample roller further comprises a power device capable of driving the sample roller to rotate. The cathode ion source and the magnetron sputtering target extend inwards into the sample roller from the opening in the same end of the sample roller. The water-cooled anode extends inwards into the sample roller from the opening in the other end of the sample roller.

TWO-ELECTRODE CONTINUOUS PLASMA PROCESSING SYSTEM

A two-electrode continuous plasma processing system includes a processing chamber having a clamping device, a moving device, a first and a second electrodes, and a first and a second radio frequency power sources. When an object moves into a processing space of the processing chamber, the moving device controls the second electrode to drive the object to move toward the first electrode, and actuates the second electrode and the clamping device to clamp and fix the object. The first radio frequency power source provides the first electrode with a first radio frequency energy to control the density of plasma. The second radio frequency power source provides the second electrode with a second radio frequency energy to control the ion energy of the plasma. Therefore, the plasma is efficiently stabilized, lowering the probability of object damage.

CONTINUOUS PLASMA PROCESSING SYSTEM WITH ADJUSTABLE ELECTRODE

A continuous plasma processing system with adjustable electrode includes a frame shape carrier plate for holding a to-be-processed object, a loading chamber for inputting the to-be-processed object, a processing chamber, and an unloading chamber for outputting the finished object. The processing chamber has a first electrode, a second electrode, and a moving device controlling the second electrode to move between an electrically disconnected position and an electrically conducted position. When the second electrode is away from the first electrode and does not contact the to-be-processed object, the second electrode is at the electrically disconnected position. When the second electrode moves toward the first electrode to push the to-be-processed object to leave the frame shape carrier plate, the second electrode is at the electrically conducted position. The plasma electric field is prevented from being affected by particles on the carrier plate.

PLASMA GENERATING DEVICE

A plasma generating device includes a first plasma electrode and a counter electrode facing each other. The first plasma electrode extends in a lateral direction and includes two projections. Each of the two projections protrudes from the first plasma electrode in the direction of the counter electrode over a predetermined distance. The plasma generating device further includes a preload mechanism adapted for urging each of said two projections of the first plasma electrode against the counter electrode. The two projections cooperatively define a plasma gap between the first plasma electrode and the counter electrode. The counter electrode includes a support surface facing said plasma gap. The support surface is substantially flat along the plasma gap.

Piston crank agitation mechanism for physical vapor deposition conformal coatings on powder

Various implementations include a device for deposition of conformal coatings. The device includes a powder container, a connecting rod, and a crankshaft. The powder container has a first side configured to contain a powder and a second side. The connecting rod has a first end directly hingedly coupled to the second side of the powder container and a second end. The crankshaft has a longitudinal axis, a main shaft portion extending along the longitudinal axis, and a cam portion radially offset from and rotatable about the longitudinal axis. The second end of the connecting rod is directly rotatably coupled to the cam portion. Rotation of the crankshaft about the longitudinal axis causes the second end of the connecting rod to rotate about the longitudinal axis, causing the powder container to linearly oscillate between a first position and a second position.

Apparatus and Method for Plasma Enhanced Chemical Vapour Deposition

The present disclosure relates to a process for simultaneous deposition onto two opposite sides of a sheetlike substrate using a plurality of linear plasma sources, comprising the steps: providing a reaction chamber comprising a gaseous atmosphere; and at least two linear plasma sources positioned in the chamber,

introducing a sheetlike substrate comprising two elongate sides into the reaction chamber, and moving the substrate between the at least two linear plasma sources at a first velocity; supplying power to the linear plasma sources to generate linear plasmas in the vicinity of each side of the substrate;

introducing at least one reactant mixture, at a first gas flow rate, into the reaction chamber on each of the respective opposite sides of the substrate, the composition of the mixture being such that, upon contact with the plasma, the reactant mixture decomposes and generates a chemical reactant species capable of being deposited as a film onto the corresponding side of the substrate;

allowing the chemical reactant species to simultaneously be deposited onto the first and second opposite sides of the substrate at the same position with respect to the substrate movement direction;

to obtain a substrate comprising a coated homogeneous film of desired thickness on the opposite sides of the substrate.