Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

A magnetically enhanced plasma apparatus includes a hollow cathode target assembly; an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly; a cathode magnet assembly; a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly; an electrode positioned adjacent to the row of magnets behind the gap; a first radio frequency (RF) power supply coupled to the electrode, wherein the electrode is coupled to ground through an inductor; and a second radio frequency (RF) power supply coupled to the hollow cathode target assembly. The second RF power supply ignites and sustains plasma in the hollow cathode target assembly. A frequency and power of the second RF power supply are selected to increase at least one of a degree of dissociation of feed gas molecules and degree of ionization of feed gas atoms. A frequency and power of the first RF power supply are selected to increase a degree of dissociation of feed gas molecules to form a layer from sputtering hollow cathode target material onto a substrate.

A spot type atmospheric pressure plasma device includes a metal casing, a metal electrode, a dielectric layer, and a gas channel. The metal electrode is disposed in an inner space of the metal casing. The dielectric layer is disposed in the inner space and surrounds an outer side surface of the metal electrode. A central area of a bottom of the dielectric layer has a plasma jet, and a bottom of the metal electrode is adjacent to the plasma jet. The gas channel includes a first section, a second section, and a third section. The first section passes through the metal casing and the dielectric layer. The second section is connected to the first section and extends between the dielectric layer and the outer side surface. The third section is connected to the second section, and is configured to direct a working gas to the plasma jet.

A wide area atmospheric pressure plasma device includes a metal casing, a metal electrode, and a dielectric layer. The metal casing includes a chamber, at least one gas channel, and a plasma jet channel, in which the plasma jet channel is located under the chamber. The metal electrode is disposed within the chamber, is adjacent to the plasma jet channel, and extends along a length direction of the plasma jet channel. An outlet of the gas channel is adjacent to a bottom of the metal electrode, such that a working gas in the gas channel is sprayed towards the bottom of the metal electrode. The dielectric layer wraps the metal electrode.

A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H.sub.2/N.sub.2, H.sub.2/Ar, H.sub.2/He, NH.sub.3/N.sub.2, NH.sub.3/Ar, or NH.sub.3/He and the chip and substrate may be maintained in a low oxygen environment.

A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode, a second electrode arranged so as to define a predetermined gap between a planar bottom surface of the first electrode and a planar top surface of the second electrode; at least one supplemental electrode, a first dielectric layer, a second dielectric layer, at least one supplemental top dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, at least one supplemental bottom dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, and a power supply configured to supply electrical power to the first, second, and supplemental electrodes at a predetermined voltage and frequency, such that, based on the predetermined gaps between the first, second, and supplemental electrodes, atmospheric pressure, low temperature plasma is generated.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode; a second electrode opposing the first electrode so as to define a predetermined gap therebetween; at least one supplemental electrode opposing a planar top surface of the second electrode and a planar bottom surface of the first electrode; a first dielectric layer; at least one supplemental dielectric layer that is disposed on a additional planar bottom surface of the at least one supplemental electrode having a relative permittivity between 2 and 500, and a thickness of 3 mm or less; and a power supply configured to supply electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second electrodes, atmospheric pressure, low-temperature plasma is generated.

A system comprises an apparatus having a nozzle. An element is arranged around the apparatus. A feeder is configured to supply a powder of a material into the apparatus. A gas source is configured to supply a precursor gas into the apparatus and to supply an inert gas to circulate through a space between the element and the apparatus and to exit around the nozzle. A plasma generator is arranged in the apparatus and is configured to ionize the precursor gas and atomize the powder and to eject through the nozzle a jet of particles composed of the atomized powder and the ionized precursor gas onto a substrate arranged adjacent to the nozzle.

A portable container is provided for handling an implant. The container comprises a sealed compartment enclosing a fluid of a pre-defined composition and at least one implant configured to be installed in a live subject. The container may comprise at least one electrode made of an electrical conductive material, electrically associated with an electric conductor outside the sealed compartment and configured for applying a plasma generating electric field inside the sealed compartment. An apparatus for plasma treatment of an implant and having an activation device is further provided. The activation device comprises a slot configured to receive a portable container, and an electrical circuit configured to be electrically associated with at least one electrode. The electrical circuit is configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the sealed compartment, when the portable container is disposed in the slot.