A plasma processing device includes: a plurality of processing chambers; a junction exhaust pipe into which a plurality of exhaust flow paths for evacuating interiors of the plurality of processing chambers joins; and a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively, wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, to deactivate energy of hot electrons flowing through the flow path.

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

There is provided a decompression processing method for a substrate processing apparatus including a chamber for processing a substrate in an inside thereof, a decompression unit that decompresses the inside of the chamber, and a gas supply that supplies a gas into the inside of the chamber, the method including supplying an additional substance mixable with moisture in a liquid or solid state by the gas supply to the inside of the chamber, forming the moisture into a mixture of the additional substance, and decompressing the inside of the chamber by the decompression unit to remove as a gas the mixture from the inside of the chamber.

A method for temperature control includes: acquiring the present temperature of a reaction window in a process chamber of a semiconductor machine; comparing the present temperature with the preset temperature to acquire a comparison result; and adjusting the exhaust amount of an exhaust passage of the process chamber based on the comparison result to control the temperature of the reaction window.

A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.

A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.