A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.

A pressure control system includes a first sensor, a second sensor, an evacuation valve and a controller. The first sensor is configured to detect a frontside pressure within a processing chamber. The frontside pressure is indicative of a downforce on a substrate isposed on a substrate support within the processing chamber. The second sensor is configured to detect a backside pressure on a ackside of the substrate. The controller is configured to: control the evacuation valve to remove gas from and reduce the frontside pressure of the processing chamber; and during the removal of gas from a reduction in the frontside pressure of the processing chamber and based on the frontside pressure and the backside pressure, regulate an opening of the evacuation valve such that the frontside pressure does not drop below the backside pressure.

A substrate processing apparatus including a substrate support unit connected to a vacuum pump to fix a substrate is provided. The substrate processing apparatus comprises a chamber including a processing space therein, a substrate support unit disposed in the processing space and for supporting a substrate, a first vacuum pump, a second vacuum pump connected to the processing space of the chamber, a first valve disposed between the first vacuum pump and the second vacuum pump, and a second valve disposed between the first vacuum pump and the substrate support unit, wherein the first vacuum pump reduces a pressure in a space between the substrate support unit and the substrate to fix the substrate to the substrate support unit in response to the second valve being turned on.

A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode. The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.

A substrate processing apparatus includes: a chamber; first and second nozzle units inside the chamber; a remote plasma generator outside the chamber and converting a cleaning gas into a plasma state; a common pipe outside the chamber and connected to the remote plasma generator through which the cleaning gas in the plasma state flows; a first connection pipe connecting the common pipe and the first nozzle unit; a second connection pipe connecting the common pipe and the second nozzle unit; a source gas supply pipe connected to the first connection pipe outside the chamber, supplying a source gas to the first connection pipe, and in which a first supply valve is installed, and a reaction gas supply pipe connected to the second connecting pipe outside the chamber, supplying a reaction gas to the second connection pipe, and in which a second supply valve is installed.

An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

A plasma processing apparatus includes a chamber having an upper wall with a plurality of through holes and a lower wall with an exhaust hole, the chamber defining a plasma processing space; a substrate stage disposed within the chamber, the substrate stage having a seating surface, wherein a substrate is seated on the seating surface; a baffle plate disposed between the upper wall and the substrate stage, the baffle plate having gas distribution holes; a gas supply configured to supply gas into the chamber through the through holes; a pumping device having an exhaust pipe, the exhaust pipe connected to the exhaust hole to control pressure inside the chamber; and a plasma generator configured to generate a first plasma using the gas supplied into the chamber through at least one of the through holes formed in the upper wall.

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

A vacuum trap, a plasma etch system using the vacuum trap and a method of cleaning the vacuum trap. The vacuum trap includes a baffle housing; and a removable baffle assembly disposed in the baffle housing, the baffle assembly comprising a set of baffle plates, the baffle plates spaced along a support rod from a first baffle plate to a last baffle plate, the baffle plates alternately disposed above and below the support rod and alternately disposed in an upper region and a lower region of the baffle housing.