Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

The present application discloses a semiconductor manufacturing apparatus, including: a chamber including an inner chamber, an outer chamber and a passage communicating the inner chamber with the outer chamber, the passage being located between the inner chamber and a chamber sidewall; and one or more electrodes disposed in the chamber sidewall and configured to ionize a treating gas coming from the inner chamber to generate plasma so as to clean off deposit produced in the inner chamber.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

A processing apparatus is provided. The processing apparatus includes a processing chamber, a pump, and an intersecting module. The process chamber has a gas outlet. The pump communicates with the gas outlet. The pump is configured to exhaust gas from the processing chamber via the gas outlet. The intersecting module is positioned between the pump and the gas outlet. The intersecting module includes a plurality of support members and a plurality of internal ventilating plates. The support members are arranged along a longitudinal direction. Each of the internal ventilating plates has a plurality of orifices. At least one of the internal ventilating plates is positioned between two of the support members positioned adjacent to each other in the longitudinal direction. Each of the internal ventilating plates is inclined relative to a transversal direction that is perpendicular to the longitudinal direction.

Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

An e-beam device includes a cold-field emission source to emit electrons and an extractor electrode to be positively biased with respect to the cold-field emission source to extract the electrons from the cold-field emission source. The extractor electrode has a first opening for the electrons. The e-beam device also includes a mirror electrode with a second opening for the electrons. The mirror electrode is configurable to be positively biased with respect to the extractor electrode during a first mode of operation and to be negatively biased with respect to the extractor electrode during a second mode of operation. The extractor electrode is disposed between the cold-field emission source and the mirror electrode. The e-beam device further includes an anode to be positively biased with respect to the extractor electrode and the cold-field emission source. The mirror electrode is disposed between the extractor electrode and the anode.

A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a shared remote plasma unit; a plurality of first cleaning gas lines configured to fluidly couple the shared remote plasma unit to the reaction chambers; and a cleaning gas source to provide the shared remote plasma unit with a cleaning gas; wherein each of the first cleaning gas lines is provided with a valve and is connected to a sidewall of the reaction chamber.