A magnet unit Mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line of the target so as to close like a racetrack shape. The magnet unit is constituted into separate parts of: a first part which respectively forms a corner portion of the racetrack shape at both ends, in the direction of the generating line, of the target; a second part which is respectively disposed on the inside, as seen in the direction of the generating line, of the target, adjacent to the first part; and a third part which is positioned between the second parts.

An apparatus for sputtering target material onto a substrate based on a plasma confining racetrack having two parallel straight portions and two turnaround portions includes a tubular target, an elongated magnet array, and a drive mechanism. The tubular target has two ends in proximity to the two turnaround portions and a longitudinal axis about which the target is rotatable. The magnet array is supported within the target to generate a plasma-confining magnetic field. The array includes a central stationary portion of magnets and two axially movable shunts positioned at the ends of the stationary portion. Each shunt carries a magnet segment configured to slidably extend from each end of the stationary portion to define a gap. The gaps are positioned internal to the turnaround portions. The drive mechanism axially moves the shunts parallel to the longitudinal axis of the target to vary a width of the gaps.

A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Disclosed herein are systems, methods, devices for a magnet system that includes a housing with a housing interior. The magnet system also includes a magnet holder disposed in the housing interior and supported by the housing, preferably stationary with respect thereto. The magnet system also includes a housing cover forming a fluid-tight chamber when mated with the housing, wherein the housing cover includes a gear stage, a generator, and a rotary coupling that couples the gear stage to the generator.

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes.

A sputter device for depositing a layer on a substrate in a vacuum chamber and having a layer property in each point of the substrate surface. The sputter device comprises at least one end block adapted for holding a cylindrical target having a longitudinal axis in a first direction, and a first drive means for providing a rotational movement of the at least one cylindrical target around its longitudinal axis. The sputter device includes a second drive means for applying a translational movement to an end block in a second direction. The first and the second drive means are adapted for, during sputtering, being simultaneously operational in the vacuum chamber. The movement of the first drive means does not impact the uniformity of the layer sputtered on the substrate in the direction on the surface of the substrate corresponding to a perpendicular projection of the second direction onto the substrate.