An upright target structure includes a target main body. The target main body has a first surface and a second surface opposite to each other. The first surface is configured to connect with a back plate. The target main body further has a third surface, a fourth surface, a fifth surface and a sixth surface. The third surface connects with the first surface and the second surface. The fourth surface is opposite to the third surface and connects with the first surface. The fifth surface is opposite to the third surface and connects with the second surface. The sixth surface connects with the fourth surface and the fifth surface. The sixth surface is away from the first surface as getting close to the fifth surface.

A sputtering apparatus includes a chamber configured to provide a space where a deposition process is performed on a substrate, a substrate holder configured to support the substrate within the chamber, and at least one turret-type target assembly located over the substrate, including a plurality of targets mounted thereon and adapted to operatively rotate by a predetermined angle about its longitudinal axis such that any one of the targets is off-axis aligned with respect to a film-deposited surface of the substrate.

Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm.sup.3 or greater, the number of the spinel phases per area of 20 counts/100 μm.sup.2 or greater, and a spinel phase distribution index of 0.40 or less.

A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target made of an insulating material; a backing plate bonded to one surface of the target; and, where such a side of the backing plate as is on the side of the target is defined as a lower side, an annular shield plate disposed to lie opposite to the lower side of that projected portion of the backing plate which is projected outward beyond an outer peripheral end of the target. The cathode assembly has a bonding portion arranged to be protruded relative to the projected portion. An inner peripheral edge portion of the shield plate is positioned in a clearance between that extended portion of the target which is extended outward beyond the bonding portion in a state in which the target is kept bonded to the bonding portion, and the projected portion of the backing plate.

Provided is a cylindrical sputtering target made of a metal material, which has reduced particles. The sputtering target includes at least a target material, wherein the target material includes one or more metal elements, and has a crystal grain size of 10 μm or less.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation.

The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.