The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

The present invention discloses a target assembly which allows safe, fracture-free and economic operation of target materials with low fracture toughness and/or bending strength during arc evaporation processes as well as in sputtering processes. The present invention discloses a target assembly for PVD processes, comprising a target, and a target holding device (20), characterized in that the target (10) comprises a first bayonet lock and the target holding device (20) comprises a counterbody for the first bayonet lock of the target and a second bayonet lock for engaging the target assembly in the cooling means of the deposition chamber.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

A rotatable sputtering target has a target material, a back tube and a joint piece. The joint piece is disposed between the target material and the back tube. The joint piece has a compressible structure and an electrically and thermally conductive adhesive. Particularly, the compressible structure being a compressible blanket or a compressible sheet has multiple through holes and thus the electrically and thermally conductive adhesive is filled in the through holes and then directly formed between the target material and the back tube. Using the joint piece to joint the target material and the back tube not only maintains the joint strength but also elevates the tolerable power of the rotatable sputtering target, which can increase the sputtering efficiency.

A physical vapor deposition chamber a first target comprising a bottom surface, a top surface, a cross-sectional thickness defining a first target cross-sectional thickness between the top surface and the bottom surface, a first end and a second end opposite the first end, the cross-sectional thickness at the first end being less than the cross-sectional thickness at the second end. Methods of processing a substrate are also provided.

A device, a method, and a use for coating lenses are proposed, wherein the lenses to be coated are arranged in pairs over parallel, tubular targets. The distance of the targets to each other and/or to the lenses is varied for individual adaption. Further, the lenses are coated from both sides.

Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si.sup.4+ ions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.