Disclosed herein are devices, methods, and systems related to a magnetron-target coupling that includes a target coupling flange, a shaft fixedly coupled to the target coupling flange on a face opposite the target coupling flange, and having a first linear bearing component on a face opposite the target coupling flange. The magnetron-target coupling also includes a communication interface having a first communication electrode and a second communication electrode that are electrically coupled to each other wherein the second communication electrode is fixedly attached to the target coupling flange on a side opposite the shaft, the target coupling flange being disposed between the first communication electrode and the second communication electrode. The first communication electrode is supported such that it may be moved toward and/or away from the second communication electrode.

A deposition apparatus, including: a substrate supporter, wherein a substrate is fixed to the substrate supporter; a target facing the substrate; a first magnet assembly disposed below the target and including a first magnet extending in a first direction and having a first length, and a second magnet at least partially surrounding the first magnet; and a second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction which is substantially perpendicular to the first direction, and including a first magnet extending in the first direction and having a second length greater than the first length, and a second magnet at least partially surrounding the first magnet, and wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a magnetic backing plate with a blind recess into which a moveable magnetic control body can be adjustably disposed.

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.

A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member.

A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.