A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.

The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

A high density plasma processing apparatus. The apparatus comprising: a process chamber containing a gaseous medium; a length of antenna extending through the process chamber; a housing enclosing the antenna from the process chamber; and one or more magnets. In use, the antenna excites the gaseous medium within the process chamber to generate a plasma; and wherein the one or more magnets are configured such that the plasma is propagated as a sheet across the process chamber in an orthogonal direction relative to the length of the antenna.

A method of generating and processing a uniform high density plasma sheet. The method comprising generating a plasma within a chamber using plasma source; and within the same chamber containing and shaping the plasma using magnetic and/or electrostatic fields. The plasma is propagated as a uniform high density sheet within the chamber.

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.

A charged particle beam treatment apparatus includes an irradiator that irradiates an irradiation target with a charged particle beam by a scanning method, in which the irradiator includes a scanning electromagnet that performs scanning with the charged particle beam, is rotatable around the irradiation target by a rotating gantry, and emits the charged particle beam with a base axis orthogonal to a center line of the rotating gantry and passing through the center line as a reference, and when the scanning electromagnet is not operated, the charged particle beam which is emitted from a tip portion of the irradiator is inclined in one direction with respect to the base axis.

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.