Embodiments of a plasma apparatus are provided. The plasma apparatus includes a processing chamber and a wafer chuck disposed in the processing chamber. The plasma apparatus also includes a target element located over the wafer chuck and an electromagnet array located over the target element and having a number of electromagnets. Some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element. The magnetic-field zone is moved during a semiconductor manufacturing process.

A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.

A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber to protect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.

An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

A physical vapor deposition (PVD) apparatus includes: a vacuum chamber; a pedestal arranged in the vacuum chamber and configured to support a substrate; a target arranged on the vacuum chamber and including a deposition material; a shield arranged on an inner sidewall of the vacuum chamber to protect the vacuum chamber from the deposition material; a target power supply applying a target voltage to the target to generate plasma in the vacuum chamber; and a magnet configured to induce the plasma to the target; and a magnetic field formation line connected with the target power supply, wherein the magnetic field formation line surrounds the shield symmetrically with respect to a center of the shield to form a magnetic field in the vacuum chamber.