The present disclosure provides an ion trap apparatus and a saddle point moving method for the ion trap apparatus. The ion trap apparatus comprises: an insulating base material, the insulating base material being a concave structure; and at least two segments of arc-shaped metal reflective electrodes, wherein the arc-shaped metal reflective electrodes cover the front side of the insulating base material, the front side being a concave surface; each segment of the arc-shaped metal reflective electrodes is electrically insulated; and each segment of the arc-shaped metal reflective electrodes is used to receive a radio frequency voltage which has the same frequency, the same phase and an adjustable amplitude. The apparatus may achieve ideal imaging while improving the light collection efficiency, thereby improving the success rate of the preparation of ion-photon entangled states.

Provided are improved toroidal ion traps and methods of design of such ion traps. Toroidal ion traps include an inner electrode comprising a first surface; an outer electrode at least partially circumferentially surrounding the inner electrode, the outer electrode comprising a second surface substantially facing the first surface, wherein the outer electrode is spaced apart from the first surface in a radial direction; a first end electrode comprising a third surface; a second end electrode comprising a fourth surface substantially facing the third surface; an axis of rotation extending through the inner electrode; and wherein: the first, second, third, and fourth surfaces define an ion confinement cavity and at least portions of each of the first, second, third, and fourth surfaces extend through or along iso-potential surfaces associated with a linear combination of toroidal multipoles to generate an electric field extending through slits in the first and second end electrodes.

An ion-optical device comprising: a plurality of electrodes (2); a first AC voltage supply (6); and a transformer (4) having: a toroidal core (8); a primary winding (10) connected to the AC voltage supply (6) and passing through the aperture within the toroidal core (8); and at least one secondary winding (13,15) wound around the toroidal core 8 and electrically connected to multiple ones of said plurality of electrodes.

A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

The invention generally relates to systems and methods for precursor and neutral loss scan in an ion trap. In certain aspects, the invention provides a system that includes a mass spectrometer having an ion trap, and a central processing unit (CPU). The CPU includes storage coupled to the CPU for storing instructions that when executed by the CPU cause the system to excite a precursor ion and eject a product ion in the single ion trap.

A spherical ion trap includes a substrate and an ion aperture; two RF electrodes in electrostatic communication with an ion trapping region; RF ground electrodes in electrostatic communication with the ion trapping region; and the ion trapping region bounded by opposing RF electrodes and the RF ground electrodes, such that: the ion trapping region is disposed within the ion aperture and receives ions that are selectively trapped in the ion trapping region in response to receipt of DC and RF voltages by the RF electrodes, and receipt of the DC voltages by RF ground electrodes, and the first RF electrode, the second RF electrode, the RF ground electrodes, and the ion trapping region are disposed in the same plane within the ion aperture.

A device for trapping ions includes: a first substrate having an upper multi-layer electrode structure implemented at a top side of the first substrate; a second substrate disposed over the first substrate and having a lower multi-layer electrode structure implemented at a bottom side of the second substrate; and one or more first level ion traps configured to trap ions in a space between the first substrate and the second substrate. The one or more first level ion traps includes the upper multi-layer electrode structure of the first substrate and the lower multi-layer electrode structure of the second substrate. A method of controlling trapped ions in a device is also described.

Aspects of the present disclosure describe devices trapping devices for use in quantum information processing (QIP) architectures, and more particularly, to the use and fabrication of a multi-layer ion trap on shaped glass or dielectric substrate. A method for fabricating the ion trap is described that includes preparing a back surface of the substrate, building a multi-layer stack on the top surface of the substrate, and completing the back etch to break through the substrate and etching through a metal and dielectric in the multi-layer stack to complete the formation of the ion trap. Shaping of the ion trap may also include trap narrowing features, wings, and/or undercutting. An ion trap fabricated using this approach may be used in a QIP system to trap atomic species provided through a hole in the back of the substrate for use as qubits in quantum operations and computations.

An ion analyzer for analyzing product ions generated by irradiating precursor ions derived from a sample component with radicals, the ion analyzer including a reaction chamber 2, a radical supply unit 5, 6 configured to generate radicals and supply the radicals to the reaction chamber, a radical temperature acquisition unit 911, 912 configured to acquire a temperature of the radicals to be supplied to the reaction chamber, a standard substance supply unit 11 configured to supply a predetermined amount of predetermined precursor ions to the reaction chamber, the predetermined precursor ions being generated from a standard substance whose activation energy of a reaction in which the radicals attach to the standard substance is known, an ion measurement unit 92 configured to measure an amount of predetermined product ions generated from the precursor ions derived from the standard substance by the reaction with the radicals, a reactive radical amount calculation unit 93 configured to obtain an amount of reactive radicals based on the amount of the predetermined product ions, and a radical density calculation unit 94 configured to obtain a radical density based on the temperature of the radicals, the activation energy, and the amount of the reactive radicals.