Patent classifications
H01J2201/30415
Method for controllably growing ZnO Nanowires
The present invention relates to a method for controllably growing ZnO nanowires, for example to be used in relation to field emission lighting. In particular, the invention relates to a method of controlling thermal oxidation conditions to achieve steady-state conditions between an oxygen consumption rate by a growing oxide on a surface of a structure and the decomposition rate of the oxygen-carrying species within the chamber. The invention also relates to a corresponding field emission cathode.
METHOD FOR CONTROLLABLY GROWING ZNO NANOWIRES
The present invention relates to a method for controllably growing ZnO nanowires, for example to be used in relation to field emission lighting. In particular, the invention relates to a method of controlling thermal oxidation conditions to achieve steady-state conditions between an oxygen consumption rate by a growing oxide on a surface of a structure and the decomposition rate of the oxygen-carrying species within the chamber. The invention also relates to a corresponding field emission cathode.
Electron beam emitters with ruthenium coating
An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.
Electron Beam Emitters with Ruthenium Coating
An emitter with a protective cap layer on an exterior surface of the emitter is disclosed. The emitter can have a diameter of 100 nm or less. The protective cap layer includes ruthenium. Ruthenium is resistant to oxidation and carbon growth. The protective cap layer also can have relatively low sputter yields to withstand erosion by ions. The emitter may be part of a system with an electron beam source. An electric field can be applied to the emitter and an electron beam can be generated from the emitter. The protective cap layer may be applied to the emitter by sputter deposition, atomic layer deposition (ALD), or ion sputtering.
Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
Carbon nanomaterial functionalized needle tip modified with low work function material and preparation method thereof
A carbon nanomaterial functionalized needle tip is modified with a low work function material. The needle tip is formed by combining a carbon nanomaterial with a material of a needle tip through a covalent bond. The interior or outer surface of the carbon nanomaterial is modified with a low work function material. The material of the needle tip is a metal which can be any of tungsten, iron, cobalt, nickel, and titanium. The carbon nanomaterial can be carbon nanocone or carbon nanotube. The tip of the carbon nanomaterial has the same orientation as the metal needle tip. The low work function material can be selected from metals, metal carbides, metal oxides, borides, nitrides, and endohedral metallofullerene. The carbon nanomaterial functionalized needle tip has a lower electron emission barrier, and can effectively reduce the electric field intensity required for electron emission, and improve the emission current and emission efficiency.
Field Emission Electron Source, Electron Optical Device, and Manufacturing Method
In a field emission electron source used in an electron optical device, a tip distal end portion of the field emission electron source includes a needle-shaped shunt having a diameter that is reduced toward a distal end, a substantially spherical protrusion formed at the distal end of the shunt, a coating that covers the shunt and the substantially spherical protrusion, and an opening through which a part of the substantially spherical protrusion is exposed, the shunt and the substantially spherical protrusion are formed by using first metal as a material, the coating is formed by using second metal as a material, and the second metal has a work function larger than a work function of the first metal.
Field emission electron source, electron optical device, and manufacturing method
In a field emission electron source used in an electron optical device, a tip distal end portion of the field emission electron source includes a needle-shaped shunt having a diameter that is reduced toward a distal end, a substantially spherical protrusion formed at the distal end of the shunt, a coating that covers the shunt and the substantially spherical protrusion, and an opening through which a part of the substantially spherical protrusion is exposed, the shunt and the substantially spherical protrusion are formed by using first metal as a material, the coating is formed by using second metal as a material, and the second metal has a work function larger than a work function of the first metal.