Patent classifications
H01J2237/2805
STRUCTURE ANALYSIS METHOD USING A SCANNING ELECTRON MICROSCOPE
A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.
Backscattered Electrons (BSE) Imaging Using Multi-Beam Tools
Multi-beam scanning electron microscope inspection systems are disclosed. A multi-beam scanning electron microscope inspection system may include an electron source and a beamlet control mechanism. The beamlet control mechanism may be configured to produce a plurality of beamlets utilizing electrons provided by the electron source and deliver one of the plurality of beamlets toward a target at a time instance. The multi-beam scanning electron microscope inspection system may also include a detector configured to produce an image of the target at least partially based on electrons backscattered out of the target.
ELECTRON MICROSCOPE DETECTOR AND RELATED METHODS
Embodiments of the present disclosure include a scanning electron microscope (SEM) having an electron gun configured to generate an electron beam that is directed along an axis through a column of the SEM towards a sample stage. In some embodiments, the SEM includes a first backscattered electron (BSE) detector mounted along the axis. In some examples, the SEM further includes a second BSE detector mounted off the axis, where the second BSE detector wraps around a bottom portion of the column. The second BSE detector, in some examples, includes a plurality of blades having either a flat shape or an arc shape in a side view. Additionally, in some embodiments, the plurality of blades are arranged in a circular configuration in a top view.