This cross-section observation device bombards an object with a charged particle beam to repeatedly expose cross-sections of the object, bombards at least some of the cross-sections from among the plurality of the exposed cross-sections with a charged particle beam to acquire cross-sectional image information describing each of the at least some of the cross-sections, generates for each of these cross-sections a cross-sectional image described by the cross-sectional image information acquired, and generates a three-dimensional image in which the generated cross-sectional images are stacked together. This cross-section observation device displays a first three-dimensional image along with a second three-dimensional image, the first three-dimensional image being a three-dimensional image from the stacking of first cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a first condition, and the second three-dimensional image being a three-dimensional image from the stacking of second cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a second condition.

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

Disclosed herein is a computer-based method for non-destructive depth-profiling of samples. The method includes a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample, which penetrates the sample to a respective depth determined by the landing energy, and (ii) sensing electrons returned from the sample, thereby obtaining a respective sensed electrons data set. The data analysis operation includes generating from the sensed electrons data sets a concentration map, which characterizing at least a vertical dimension of the sample.

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

The present disclosure relates to a pattern measuring method to appropriately measure a height and a depth of a pattern having a high aspect ratio. The method includes measuring a width between a first pattern and another pattern formed on a wafer; calculating a value regarding an azimuth angle of a signal emitted from the wafer; and calculating height information from a portion between the first pattern and the other pattern to an upper portion of a pattern based on the measured width between the first pattern and the other pattern, the value regarding the azimuth angle, the value regarding an elevation angle, and relationship information thereof.

A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

A method of performing sub-surface imaging of a specimen in a charged-particle microscope of a scanning transmission type, comprising the following steps: Providing a beam of charged particles that is directed from a source along a particle-optical axis through an illuminator so as to irradiate the specimen; Providing a detector for detecting a flux of charged particles traversing the specimen; Causing said beam to follow a scan path across a surface of said specimen, and recording an output of said detector as a function of scan position, thereby acquiring a scanned charged-particle image I of the specimen; Repeating this procedure for different members n of an integer sequence, by choosing a value P.sub.n of a variable beam parameter P and acquiring an associated scanned image I.sub.n, thereby compiling a measurement set M={(I.sub.n, P.sub.n)}; Using computer processing apparatus to automatically deconvolve the measurement set M and spatially resolve it into a result set representing depth-resolved imagery of the specimen,
wherein: Said variable beam parameter P is focus position along said particle-optical axis; Said scanned image I is an integrated vector field image, obtained by; Embodying said detector to comprise a plurality of detection segments; Combining signals from different detection segments so as to produce a vector output from the detector at each scan position, and compiling this data to yield a vector field; Mathematically processing said vector field by subjecting it to a two-dimensional integration operation.

Provided is a process for lamella thinning and endpointing that substitutes a series of automated small angle tilts for the motions in the conventional endpointing sequence. STEM images or through-surface BSE scans are acquired at each tilt. The results are analyzed automatically to determine feature depths, and an intervention request is made requesting a user decision based on marked-up images and summary information displayed.

A method of determining the depth of a hole milled into a first region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; depositing material directly over a top surface of the sample in a second region of the sample adjacent to the first region; milling the hole in the first region of the sample using a charged particle beam generated by the charged particle beam column, wherein the hole abuts the material deposited over the top surface and includes a sidewall that extends from a bottom surface of the hole to an interface between the deposited material and the top surface of the sample; and using stereoscopic measurement techniques to calculate the depth of the hole based on distance measurements between a first point along an interface between the material and the top surface and a second point along a bottom surface of the hole.

To provide an image analysis apparatus capable of easily extracting an edge of an upper layer pattern formed intersecting with a lower layer pattern so as not to be affected by the lower layer pattern, the image analysis apparatus includes a calculation unit that calculates an analysis range including a region where the lower layer pattern intersects with the upper layer pattern and a region where the lower pattern is not formed, a calculation unit that averages a plurality of signal profiles, a calculation unit that calculates a maximum value and a minimum value of a signal intensity, a calculation unit that calculates a threshold level difference using the maximum value and the minimum value, and a calculation unit that calculates the edge of the upper layer pattern on the signal profile.