Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

A multi charged particle beam writing apparatus includes a maximum irradiation time acquisition processing circuitry to acquire, for each shot of multi-beams, a maximum irradiation time of irradiation time of each of the multi-beams, a unit region writing time calculation processing circuitry to calculate, using the maximum irradiation time for each shot, a unit region writing time by totalizing the maximum irradiation time of each shot of a plurality of times of shots of the multi-beams which irradiate a unit region concerned during stage moving, for each unit region of a plurality of unit regions obtained by dividing a writing region of a target object, a stage speed calculation processing circuitry to calculate speed of the stage for each unit region so that the stage speed becomes variable, by using the unit region writing time and a stage control processing circuitry to variably control the stage speed.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

A pattern inspection apparatus includes a data processing circuitry to input detection data based on a secondary electron from a substrate for each irradiation unit region, where n.sub.1m.sub.1 irradiation unit regions in irradiation unit regions configure one of n.sub.2m.sub.2 image reference regions configuring an inspection measurement image, to calculate, for each of the n.sub.2m.sub.2 image reference regions, a statistic value acquired from the detection data of all the n.sub.1m.sub.1 irradiation unit regions in one of the n.sub.2m.sub.2 image reference regions, and to define the statistic value as image reference data for the image reference region, and a comparison processing circuitry to receive transmission of the image reference data for each image reference region, and to compare, using a reference image corresponding to the inspection measurement image composed of the n.sub.2m.sub.2 image reference regions, the measurement image with the reference image for each image reference region.

A pattern inspection apparatus includes a data processing circuitry to input detection data based on a secondary electron from a substrate for each irradiation unit region, where n.sub.1m.sub.1 irradiation unit regions in irradiation unit regions configure one of n.sub.2m.sub.2 image reference regions configuring an inspection measurement image, to calculate, for each of the n.sub.2m.sub.2 image reference regions, a statistic value acquired from the detection data of all the n.sub.1m.sub.1 irradiation unit regions in one of the n.sub.2m.sub.2 image reference regions, and to define the statistic value as image reference data for the image reference region, and a comparison processing circuitry to receive transmission of the image reference data for each image reference region, and to compare, using a reference image corresponding to the inspection measurement image composed of the n.sub.2m.sub.2 image reference regions, the measurement image with the reference image for each image reference region.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.