According to various embodiments, a method for vaporizing a vaporization material by means of an electron beam may include the following: generating a first deflection pattern having a first power density at least on an end face of a rod-shaped vaporization material; and, subsequently, generating a second deflection pattern having a second power density on a portion of an outer edge of the rod-shaped vaporization material and a portion of an inner edge of a ring crucible, which encloses the rod-shaped vaporization material, wherein the second power density is greater than the first power density.

A method of raster scanning a surface of an object using a particle beam comprises determining a basic set of raster points within a surface; determining a surface portion of the surface of the object, wherein the surface portion is to be raster scanned; ordering a set of raster points of the basic set located within the surface portion; and scanning of the surface portion by directing the particle beam onto the raster points of the ordered set in an order corresponding to an order of the raster points in the ordered set from the outside to the inside, i.e. starting from the boundary of the surface portion towards its center, or in the reverse order, i.e. from the inside to the outside.

A multi-beam generation unit for a multi-beam system has larger individual focusing power for each of a plurality of primary charged particle beamlets. The multi-beam generation unit comprises an active terminating multi-aperture plate. The terminating multi-aperture plate can be used for a larger focusing range for an individual stigmatic focus spot adjustment of each beamlet of a plurality of primary charged particle beamlets.

A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated.

A method for analyzing disturbing influences in a multi-beam particle microscope which operates using a plurality of individual charged particle beams arranged in a raster arrangement includes the following steps: providing an object; stationary scanning the object at a first position via the plurality of the individual particle beams during a predetermined irradiation time T, as a result of which latent structures are formed on the object; raster scanning the object comprising the first position with the formed latent structures via the plurality of the individual particle beams; and analyzing the latent structures.

A method of raster scanning a surface of an object using a particle beam comprises determining a basic set of raster points within a surface; determining a surface portion of the surface of the object, wherein the surface portion is to be raster scanned; ordering a set of raster points of the basic set located within the surface portion; and scanning of the surface portion by directing the particle beam onto the raster points of the ordered set in an order corresponding to an order of the raster points in the ordered set from the outside to the inside, i.e. starting from the boundary of the surface portion towards its center, or in the reverse order, i.e. from the inside to the outside.

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

An implantation apparatus includes a scanning assembly that effects a relative movement between an ion beam and a semiconductor substrate along a first scan direction and along a second scan direction orthogonal to the first scan direction. A tilt assembly changes a tilt angle between a beam axis of the ion beam and a normal to a main surface of the semiconductor substrate from a first tilt angle 1 to a second tilt angle 2, wherein an angular span between the first tilt angle 1 and the second tilt angle 2 is at least 5. A control unit controls the tilt assembly to continuously change the tilt angle during the relative movement between the ion beam and the semiconductor substrate.

A method and system for providing at least one of planarization, densification, and exfoliation of a porous material using ion beams. The method may use an ion beam generator to generate an ion beam, the ion beam having energy above 0.1 MeV. The ion beam generator may irradiate the surface of a porous material with the ion beam to produce at least one of planarization, densification, and exfoliation of the porous material.

The present disclosure relates to a method for processing and/or examining a sample with a particle beam, comprising: providing the particle beam in a field of view of the particle beam for the purpose of processing and/or examining the sample; providing the particle beam in the field of view for the purpose of setting an electrostatic charge state of the sample. The present disclosure also relates to a corresponding computer program and a corresponding device.