A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

Apparatus and method for aligning a rotatable substrate to a support mechanism to write a feature to the substrate, and a substrate so configured. In some embodiments, the substrate has a circumferentially extending timing pattern with spaced apart first and second timing marks disposed on opposing sides of a center point of the timing pattern and an identification (ID) field that stores a unique identifier value associated with the substrate. Upon mounting of the substrate to a support mechanism that rotates the substrate about a central axis that is offset from the center point, a control circuit generates a compensation value to compensate for the offset using the first and second timing marks and outputs a process instruction to authorize processing of the substrate using the unique identifier value. In some cases, the unique identifier value is used as a lookup to a computerized database.

In one embodiment, a charged particle beam lithography apparatus includes an irradiator 201 to irradiate substrates with charged particle beams, each of the substrates being provided with a predetermined mark, and a detector 114 to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal. The apparatus further includes an amplifier 124 to adjust and amplify the detection signal and output an amplified signal, and a measurement circuitry 211 to measure a location of the predetermined mark based on the amplified signal. The apparatus further includes storage 128 to store initial gain values of the amplifier for amplifying the detection signal, the initial gain values corresponding to conditions of the scan. The amplifier amplifies the detection signal based on an initial gain value selected from the initial gain values according to a condition of the scan.

An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.

A mark-position-measurement-apparatus includes a stage with an object having plural marks thereon, a sensor including an irradiator irradiating beams to the object, and a photoreceiver receiving a reflected light from the object and outputting a height-position distribution of the object surface, a position-calculation-circuit to calculate, for each mark, a position of a mark-candidate-signal acquired in a scanned region, by using the height-position distribution, for each mark, obtained by scanning the beam over the plural marks to be intersected with one of the plural marks, a combination-generation-circuit to generate plural combinations by combining mark-candidate-signals selected from the plural marks when plural mark-candidate-signals are acquired, in a scanning direction, for at least one mark, and a selection-circuit to select a combination of mark-candidate-signals, being mark signals of the plural marks, from the plural combinations, by comparing, with a predetermined reference value, relative position information regarding mark-candidate-signals in the same combination.

Apparatus and method for aligning a rotatable substrate to a support mechanism such as a turntable. The substrate has a circumferentially extending timing pattern comprising at least spaced apart first and second timing marks disposed on opposing sides of a center point of the substrate. The substrate is configured to be mounted to and rotated by the support mechanism about a central axis. The center point of the substrate may be offset from the central axis by an offset distance due to mechanical tolerances associated with the substrate mounting operation. The offset distance may be determined through successive detection of the first and second timing marks by a detector over at least one rotation of the support mechanism and the substrate. A write beam may be adjusted using the determined offset distance to write a second feature to the substrate in alignment with a previously written first feature.

A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is irradiated with a beam of electrically charged particles through a plurality of apertures to form corresponding beamlets, comprises an aperture array device in which said apertures are realized according to several sets of apertures arranged in respective aperture arrangements, and an absorber array device having openings configured for the passage of at least a subset of beamlets that are formed by the apertures. The absorber array device comprises openings corresponding to one of the aperture arrangement sets, whereas it includes a charged-particle absorbing structure comprising absorbing regions surrounded by elevated regions and configured to absorb charged particles impinging thereupon at locations corresponding to apertures of the other aperture arrangements of the aperture array device, effectively confining the effects of irradiated particles and electric charge therein.

A charged particle beam writing apparatus according to an embodiment starts a wiring operation when the sum of the amount of shot data stored in a buffer memory of a transfer control calculator, the amount of shot data being transferred by a transfer unit, and the amount of shot data stored in a buffer memory of a deflection control circuit reaches the amount of data for one stripe region.

A charged particle beam writing apparatus according to an embodiment starts a wiring operation when the sum of the amount of shot data stored in a buffer memory of a transfer control calculator, the amount of shot data being transferred by a transfer unit, and the amount of shot data stored in a buffer memory of a deflection control circuit reaches the amount of data for one stripe region.

A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.