In one embodiment, a charged particle beam writing method is for writing a pattern in a writing area on a substrate by irradiating a charged particle beam onto the substrate while moving the substrate to write stripes sequentially, each of the stripes having a width W and shapes obtained by dividing the writing area by the width W. The method includes performing S times (S is an integer greater than or equal to two) strokes, each of the strokes which is a process writing the stripes in a multiplicity of 2n (n is an integer greater than or equal to one) while shifting a reference point of each of the stripes in the width direction by a preset stripe shift amount and changing a moving direction of the substrate for each of the stripes, and writing while the reference point of the stripes in the each of the strokes in the width direction of the stripes is shifted by a preset stroke shift amount in each of the strokes.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

A multiple electron beam irradiation apparatus includes a first region setting circuit which sets a first frame region of a plurality of first frame regions which can be irradiated with remaining beams after excluding beams in one row and one column at end; a second region setting circuit which sets a second frame region of a plurality of second frame regions each having four corners equivalent to an irradiation position of the defective beam by using normal beams; and an electron beam irradiation mechanism which performs the first multiple electron beam irradiation processing for the each of the plurality of first frame regions of the target object by using the normal beams, and perform second multiple electron beam irradiation processing for each of the plurality of second frame regions by using at least beams at the four corners.

To realize a multi-beam formation device that can stably machine a fine pattern using complementary lithography, provided is a device that deforms and deflects a beam, including an aperture layer having a first aperture that deforms and passes a beam incident thereto from a first surface side of the device and a deflection layer that passes and deflects the beam that has been passed by the aperture layer. The deflection layer includes a first electrode section having a first electrode facing a beam passing space in the deflection layer corresponding to the first aperture and a second electrode section having an extending portion that extends toward the beam passing space and is independent from an adjacent layer in the deflection layer and a second electrode facing the first electrode in a manner to sandwich the beam passing space between the first electrode and an end portion of the second electrode.

A modulated beam moving stage device is used in electron-beam photolithography to create an optical device. The optical device can have varying pitch to increase angular selectivity to increase light entering an eyebox of a virtual-reality and/or an augmented-reality system.

In one embodiment, a multi-charged-particle-beam writing method includes performing a tracking operation such that, while a substrate placed on a stage moving continuously is being irradiated with multiple beams including a plurality of charged particle beams, deflection positions of the multiple beams follow movement of the stage, and applying the multiple beams to the substrate having a writing area including a plurality of rectangular regions arranged in a mesh during the tracking operation such that each of the plurality of rectangular regions is irradiated with the multiple beams. Each rectangular region includes a plurality of pixels each having a predetermined size and arranged in a mesh. At least one subset of the plurality of pixels is irradiated with the multiple beams in a first shot order and is then irradiated with the multiple beams in a second shot order different from the first shot order.

To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region of exposure, and this movement defines a number of stripes covering said region in sequential exposures and having respective widths. The number of stripes are written parallel to each other along a general direction, which is at a small angle to a principal pattern direction of structures to be written within the region of exposure.

Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. Each opening of the first column of openings has a dimension in the first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. Each opening of the second column of openings has the dimension in the first direction. A scan direction of the BAA is along a second direction orthogonal to the first direction. The openings of the first column of openings overlap with the openings of the second column of openings by at least 5% but less than 50% of the dimension in the first direction when scanned along the second direction.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.