Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.

The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam etch process to correct asymmetry of etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of etch across the full wafer.

The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted by a coil and an insulator, and configured to generate a plasma of the process gas in the process chamber; and an adjuster capable of adjusting a gap distance between the coil and the insulator.

There is provided a technique that includes: a process chamber that processes a plurality of substrates; a substrate holder on which the plurality of substrates is supported; an electrode that forms plasma in the process chamber, and auxiliary plate that is disposed between the plurality of substrates and assists formation of the plasma.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber; a process gas supplier through which a process gas is supplied into the process chamber; an exhauster through which an inner atmosphere of the process chamber is exhausted; a plasma generating structure configured to supply a plasma into the process chamber; a boat configured to accommodate a plurality of substrates in the process chamber; a rotary shaft configured to rotatably support the boat; and an internal conductor provided inside the rotary shaft and electrically connected to the boat; wherein the boat is made of a non-metallic material, at least a part of a surface of the boat is conductive, and the boat is configured to electrically connect the internal conductor and the plurality of substrates.

A method of pre-coating a carbon film by plasma in a processing container, includes: pre-coating an inner wall of the processing container with a first carbon film by plasma of a first carbon-containing gas under a first pressure; and processing the first carbon film with the plasma under a second pressure.

A method for performing a feedback sequence for patterning CD control. The method including performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition. The method including measuring a dimension of the plurality of features after performing the series of process steps. The method including determining a difference between the dimension that is measured and a target dimension for the plurality of features. The method including modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

A gas supply structure for an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, one or more dielectric windows 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, comprising a first diffusion plate 210 that firstly diffuses the processing gas and is connected with a processing gas supplying pipe 300, and a second diffusion plate 220 that diffuses the processing gas diffused by the first diffusion plate 210 into the main container 10 and is installed under the first diffusion plate 210, wherein the second diffusion plate 220 is formed at at least a part of the lower surface of the dielectric windows 100, is provided, so it is possible to perform injection control of the processing gas onto the plane surface of the substrate to be processed and uniform substrate processing.