Examples are disclosed that relate to depositing a carbon mask to thicken a partially etched mask. One example provides a method comprising forming a mask layer on a substrate, and etching the substrate to partially form one or more etched features, the etching of the substrate also causing etching of the mask layer. The method further comprises, after etching a portion of the one or more etched features but before completing etching of the one or more etched features, depositing, by plasma-enhanced chemical vapor deposition (PECVD), a carbon mask over the mask layer.

Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

Aspects of the present disclosure generally relate to apparatus and methods for an adjustable de-chucking voltage associated with an electrostatically charged substrate in a processing chamber. An example method of de-chucking a substrate disposed in a process chamber includes processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode. The method further includes monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator. The method further includes adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria.

An atomic layer deposition (ALD) apparatus includes a gas supply source configured to supply a first gas and a second gas, an upper plasma chamber configured to receive the first gas and generate first radicals and first ions, a main chamber disposed below the upper plasma chamber, an ion-blocking structure disposed between the upper plasma chamber and the main chamber, and configured to allow movement of the first radicals from the upper plasma chamber toward the main chamber, and block movement of the first ions, and a shower head disposed between the main chamber and the ion-blocking structure and including a plurality of first holes and a plurality of second holes, wherein the plurality of first holes are configured to supply the first radicals into the main chamber, the plurality of second holes are configured to supply the second gas into the main chamber.

There is provided a technique that includes a process chamber configured to process a substrate; a substrate-mounting part configured to support the substrate in the process chamber; a gas supply part configured to supply a gas to the process chamber; a high-frequency power supply part configured to supply high-frequency power of a predetermined frequency; a first resonance coil wound to surround the process chamber and configured by a first conductor that forms plasma at the process chamber when the high-frequency power is supplied; a second resonance coil wound to surround the process chamber and configured by a second conductor that forms plasma at the process chamber when the high-frequency power is supplied; and a controller configured to control the high-frequency power supply part so that a period of power supply to the first resonance coil does not overlap with a period of power supply to the second resonance coil.