An RF antenna structure of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, one or more dielectric windows 100 that form an upper window of the main container 10, a dielectric supporting unit 400 that is coupled to an upper end of the main container 10 and supports the dielectric window 100 to seal the inside of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the RF antenna 40 has a plate structure having width and thickness and is at least partly a combination of a horizontal antenna portion 41 and a vertical antenna portion 42, wherein a normal N of a surface of the RF antenna having the width in the horizontal antenna portion 41 is perpendicular to a top surface of the dielectric window 100 and a normal N of a surface of the RF antenna having the width in the vertical antenna portion 42 is parallel to the top surface of the dielectric window 100, is provided, so it is possible to minimize power loss due to a support structure by the replacement of a dielectric supporting structure at a region where an antenna is installed, with ceramic.

Described herein are technologies related to a radical source with a housing that includes a plasma cavity that is designed to contain a plasma created by a plasma generator. The housing has at least one gas injector designed to inject process gas into the plasma. The plasma produces radicals from the gas injected into the plasma. The cavity has an exit or opening formed therein that ejects the radicals from the cavity. The ejected radicals may be directed towards a subject wafer substrate under the radical source. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.

Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Provided is a structure variable type of a plasma source coil and a method for controlling the same. The plasma source coil comprises a plurality of coil branches extending in a spiral shape based on a central part, wherein at least one coil branch has a structure in which the extending direction or a tilting level can be adjusted.

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve. A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.