An ion beam etching apparatus comprising a plasma chamber, a plasma source disposed on top of the plasma chamber and configured to generate plasma, a process chamber defining a treating area where a substrate is treated, a grid structure disposed between the process chamber and the plasma chamber, wherein the grid structure receives the plasma, and supplies ions or radicals toward the substrate, a discharge line connected to the grid structure, and a first pumping system connected to the discharge line, wherein particles or polymers within the grid structure are discharged through the discharge line.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Nanostructured material exhibiting a random anisotropic nanostructured surface, and exhibiting an average reflection at 60 degrees off angle less than 1 percent. The nanostructured materials are useful, for example, for optical and optoelectronic devices, displays, solar, light sensors, eye wear, camera lens, and glazing.

Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

A method of processing a substrate that includes: flowing dioxygen (O.sub.2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the O.sub.2 and the adsorbate precursor, oxygen species from the O.sub.2 and the adsorbate precursor reacting under the oxygen-rich plasma to form an adsorbate; and exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer, where the adsorbate forms a sidewall passivation layer in the recess.

A thermal plasma etching system is adapted to etch an object and includes a gas source, a plasma source, a heating module, a vacuum chamber, a diffuser plate, and an electrode plate. The plasma source is communicated with the gas source, for dissociating the gas and generating a plasma. The heating module is communicated with the plasma source for heating the plasma to a thermal plasma. The heating module is disposed between the plasma source and the vacuum chamber, and the thermal plasma is adapted to enter the vacuum chamber. The diffusion disk is disposed in the vacuum chamber. The electrode plate is disposed in the vacuum chamber and separated from the diffusion disk by a distance. The object is adapted to be placed on the electrode plate, the thermal plasma diffuses from the diffusion disk to the electrode plate to etch the object on the electrode plate.

A method includes forming a gate stack over a semiconductor region, etching the semiconductor region to form a source/drain recess aside of the gate stack, depositing a first dielectric layer, wherein a portion of the first dielectric layer is in the source/drain recess, performing a treatment process on the first dielectric layer, depositing a second dielectric layer on the first dielectric layer, and etching the second dielectric layer and the first dielectric layer. A first portion of the first dielectric layer and a second portion of the second dielectric layer remain at a bottom of the source/drain recess to form a dielectric region. A source/drain region is deposited in the source/drain recess and over the dielectric region.

An etching method includes etching a material in an etch chamber by alternating normal-flow etch steps and reduced-flow etch steps, where an etchant gas is provided at a normal flow rate into the etch chamber during the normal-flow etch steps, and the etchant gas is provided at a reduced flow rate lower than the normal flow rate into the etch chamber during the reduced-flow etch steps, obtaining optical emission spectroscopy (OES) data during the reduced-flow etch steps, determining an end point for the etching based on the obtained OES data, and ending the etching at the determined end point.

Apparatuses and methods of operating the apparatus generally include a cryogenically cooled collimator that is cooled to capture and condense neutral atoms, radicals, and molecules generated in a plasma that contact surfaces thereof. The cryogenically cooled collimator includes a plurality of linear channels perpendicularly extending from the first planar side to a second planar side, wherein radicals that do not contact surfaces of the cryogenically cooled collimator are transmitted to a workpiece. Optionally, the apparatuses and methods may further include a radiation shield positioned in front of the cryogenically cooled collimator to prevent direct impingement of radiation onto the surface of the cryogenically cooled collimator. The cryogenically cooled collimator can be cooled to temperatures less than 300K during use.