A plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

A plasma processing apparatus includes a chamber, a stage, provided in the chamber, on which the substrate is to be placed, a sensor that receives the infrared rays emitted from the substrate placed on the stage and that outputs a measurement value corresponding to the intensity of the received infrared rays, and a determination section that determines occurrence or non-occurrence of a temperature abnormality in the substrate based on the measurement value. When a state in which a time rate of change of the measurement value exceeds a first threshold value persists for a period longer than a threshold time, the determination section performs first determination processing of determining that a temperature abnormality in the substrate has occurred.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).

An etching method includes: a) preparing, within a chamber, a substrate including a mask film containing ruthenium and having a predetermined pattern formed in the mask film, and a silicon-containing film provided under the mask film; b) supplying a process gas including a hydrocarbon-containing gas and a fluorine-containing gas into the chamber; and c) etching the silicon-containing film through the mask film using plasma generated from the process gas supplied into the chamber.

An atomic layer deposition (ALD) apparatus includes a gas supply source configured to supply a first gas and a second gas, an upper plasma chamber configured to receive the first gas and generate first radicals and first ions, a main chamber disposed below the upper plasma chamber, an ion-blocking structure disposed between the upper plasma chamber and the main chamber, and configured to allow movement of the first radicals from the upper plasma chamber toward the main chamber, and block movement of the first ions, and a shower head disposed between the main chamber and the ion-blocking structure and including a plurality of first holes and a plurality of second holes, wherein the plurality of first holes are configured to supply the first radicals into the main chamber, the plurality of second holes are configured to supply the second gas into the main chamber.

A plasma etching apparatus includes a chamber, a gas supply that supplies a gas into the chamber, and circuitry. The gas supply includes a gas box that supplies the gas, a gas-diffusion compartment that diffuses the gas from the gas box inside the gas-diffusion compartment and introduces the gas into the chamber, and an exhaust that discharges the gas in the gas-diffusion compartment. The circuitry is configured to control operations including (a) supplying a first gas from the gas box at a first flow rate to generate plasma in the chamber and (b) stopping supply of the first gas from the gas box, supplying a second gas from the gas box at a second flow rate, and performing gas discharge from the gas-diffusion compartment. (b) includes maintaining the gas-diffusion compartment at a pressure at which the plasma is maintained in the chamber.

Disclosed herein is a system and method for integrating atomic layer etching (ALE) and radical-based highly selective etching (HSE) within a single process chamber. The innovative design, featuring a grounded ion filter (GIF), enables the precise control of ions and neutrals during etching. The system improves process efficiency, enhances selectivity, and reduces cycle times, making it ideal for manufacturing high-performance semiconductor devices with complex, high aspect ratio structures.

A plasma processing apparatus is provided. The apparatus includes a processing chamber; a workpiece support in the processing chamber configured to support a workpiece; and a hollow cathode in the processing chamber configured to produce a plasma in the processing chamber. The hollow cathode is disposed between the workpiece support and the top of the processing chamber. The apparatus includes a gas distribution system configured to provide process gas to the processing chamber. Methods for processing workpieces are also provided.

START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORUM ETCH GAST INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER