A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.

The disclosure provides a plasma dry etching method. A plasma dry etching method according to an embodiment of the disclosure may include: a first step of placing a substrate having a photoresist pattern formed thereon, which is composed of an exposed portion and a non-exposed portion, on an electrode inside a reaction chamber of a plasma dry etching device; a second step of modifying the surface of the photoresist pattern through a plasma deposition process using a first gas; and a third step of selectively etching the non-exposed portion of the surface-modified photoresist pattern through a plasma dry etching process using a second gas.

Provided is a plasma processing method and device capable of controlling the etching mask shape during a single-step process that etches a target material disposed below the etching mask. The plasma processing method includes performing selective deposition on the etching mask in separate phases, which are controlled via a periodic bias voltage signal. By tuning the bias voltage power, duration and timing, the mask height and width can be controlled and stabilized while etching on the substrate proceeds. Thus, the present method provides an etching process that allows fine control of the etching mask shape for small pattern sizes and provides high etching selectivity through deposition.

An objective of the present invention is to provide a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus that can ensure treatment efficiency and suppress the occurrence of foreign matters, without requiring a complicated gas supplying system. One representative method, according to the present invention, of manufacturing a semiconductor device includes a step of comparing a remaining amount of processing for a film to be treated that is formed on a semiconductor wafer, with a threshold, a step of forming a compound made from the film to be treated and an organic gas by heating the semiconductor wafer while supplying the organic gas, the organic gas including a material having, within a molecule, at least two substituents that hold a lone pair, and a step of causing the compound to desorb from a surface of the semiconductor wafer by, on the basis of a result of the comparing, further heating the semiconductor wafer after the step of forming the compound, to raise a temperature of the semiconductor wafer to a predetermined temperature.

A method for multi-state pulsing to achieve a balance between bow control and mask selectivity is described. The method includes generating a primary radio frequency (RF) signal. The primary RF signal pulses among three states including a first state, a second state, and a third state. The method further includes generating a secondary RF signal. The secondary RF signal pulses among the three states. During the first state, the primary RF signal has a power level that is greater than a power level of the secondary RF signal. Also, during the second state, the secondary RF signal has a power level that is greater than a power level of the primary RF signal. During the third state, power levels of the primary and secondary RF signals are approximately equal.

A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.

A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.

Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing. The ability to synchronize and control waveform characteristics of a voltage waveform bias established on a substrate during processing allows for an improved control of the generated plasma and process of forming, for example, high-aspect ratio features in the surface of the substrate by a reactive ion etching process. As a result, greater precision for plasma processing can be achieved, which is described herein in more detail.

A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Disclosed is a plasma processing apparatus including a processing chamber and a workpiece support disposed in the processing chamber configured to support a workpiece during processing. The apparatus includes a hollow cathode disposed in the processing chamber that is configured to produce a plasma in the processing chamber. The hollow cathode is disposed adjacent to a perimeter of the workpiece support and the workpiece. The apparatus includes a gas distribution system configured to provide process gas to the processing chamber. Methods for processing workpieces are also disclosed.