The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an ion blocker dividing the inner space into a first space at a bottom side and a second space at a top side; a support unit configured to support a substrate at the first space; and a plasma source generating a plasma at the inner space, and wherein a plurality of passages are formed at the ion blocker for flowing a fluid from the second space to the first space, and the ion blocker is made of a dielectric substance, and an ion among an ion and a radical included in the plasma is captured while passing through the passage.

A method for etching in plasma processing in a plasma chamber, including continually rotating between a first etch cycle and a second etch cycle for a period of time to etch a feature in a masked substrate. The method including performing the first etch cycle on the masked substrate using a first etching chemistry for a first sub-period. The first etch cycle is continually rotated between a first state configured for passivation, a second state, and third state configured for etching the masked substrate. During the second state of the first etch cycle, a first tuning step is performed by tuning the first etching chemistry, a high frequency RF power and a low frequency RF power to provide extended passivation to the feature in the masked substrate. The method including performing the second etch cycle on the masked substrate using a second etching chemistry for a second sub-period. The second etch cycle is continually rotated between the first state configured for electrical discharge, a fourth state, and the third state configured for etching the feature in the masked substrate. During the fourth state of the second etch cycle, a second tuning step is performed by tuning the second etching chemistry, the high frequency RF power, and the low frequency RF power to provide punch-through etching to the feature in the masked substrate.

Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

The present disclosure provides a semiconductor processing chamber including a chamber, a housing, a dielectric window, a coil, a hot air hood, and an air distribution structure. The chamber has an opening at a top of the chamber. The housing is disposed above the opening. The dielectric window is disposed inside the housing and above the opening. The coil is arranged circumferentially at an inner top wall of the housing. The hot air hood is disposed inside the housing. The air distribution structure is fixedly attached to the housing. The air distribution structure includes a plurality of air passages. An air exchange port of the air passage is located outside the housing. A transfer port of the air passage is located inside the housing and is connected to an air passage port of the hot air hood. Through directly fixing the hot air hood to the dielectric window and configuring a clearance gap between the hot air hood and an inner top wall of the housing, the semiconductor processing chamber avoids compression between the hot air hood and the housing, avoids the deformation of the top wall of the housing and the change of coil distribution structure caused by the compression of the top wall of the housing by the hot air hood. Thus, the uniform distribution of the ions and free radicals in the plasma is ensured.

A semiconductor processing chamber includes a chamber having an opening at a top of the chamber, a housing disposed above the opening, a dielectric window disposed inside the housing and above the opening, a coil arranged circumferentially at an inner top wall of the housing; a hot air hood disposed inside the housing and fixedly attached to the dielectric window, where the hot air hood and the inner top wall of the housing are separated by a clearance gap, and the hot air hood includes a heating compartment for heating the dielectric window and at least two air passage ports connected to the heating compartment; and an air distribution structure being fixedly attached to the housing and including a plurality of air passages, at least two air exchange ports located outside the housing for air intake and air discharge.

A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF.sub.3 gas, and O.sub.2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF.sub.3 gas, and O.sub.2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O.sub.2 gas according to the reduction of the HBr gas.

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.