A method for cleaning a semiconductor silicon wafer including: an ozone water treatment step after polishing in ozone water, a step of performing a first ultrasonic-wave-ozone-water treatment of cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; and a step of performing a second ultrasonic-wave-ozone-water treatment of, after the step of performing the first ultrasonic-wave-ozone-water treatment, pulling out the semiconductor silicon wafer from the ozone water, performing rotation process, and cleaning at room temperature while immersing in ozone water and applying ultrasonic waves; wherein the step of performing the second ultrasonic-wave-ozone-water treatment is performed, and a hydrofluoric acid treatment step and an ozone water treatment step are performed. Accordingly, a method for cleaning a semiconductor silicon wafer and an apparatus for cleaning by which projecting defects on the wafer surface and the degradation of surface roughness can be suppressed to improve wafer quality reduce costs.

A method and apparatus for planarizing a substrate are provided. A substrate carrier head with an improved cover for holding the substrate securely is provided. The cover may have a bead that is larger than the recess into which it fits, such that the compression forms a conformal seal inside the recess. The bead may also be left uncoated to enhance adhesion of the bead to the surface of the groove. The surface of the cover may be roughened to reduce adhesion of the substrate to the cover without using a non-stick coating.

A wafer laminating method includes a cooling step of cooling a first wafer, a laminating step of producing a laminated wafer by stacking and laminating a second wafer on a surface of the first wafer when condensation forms on the surface of the cooled first wafer, and a heat treatment step of subjecting the laminated wafer to heat treatment.

A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the device wafer (110) to a first high temperature process for reducing the oxygen content of the device wafer (110) at least in a region (112a) at the second side (112); bonding the second side (112) of the device wafer (110) to a first side (121) of a carrier wafer (120) to form a substrate wafer (100); processing the first side (101) of the substrate wafer (100) to reduce the thickness of the device wafer (110); subjecting the substrate wafer (100) to a second high temperature process for reducing the oxygen content at least of the device wafer (110); and at least partially integrating at least one semiconductor component (140) into the device wafer (110) after the second high temperature process.

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.

A system for monitoring contamination level of effluent of an offline brush conditioning system includes a first set of reservoirs configured to collect first effluents from corresponding portions of a first brush and a second set of reservoirs configured to collect second effluents from corresponding portions of a second brush, and the first and second effluents are from a fluid used to condition the first and second brushes that are configured to clean a surface of a semiconductor wafer. An effluent contamination monitor is configured to monitor contamination levels of the first and second effluents, wherein the monitored contamination levels may provide feedback for use in the brush conditioning.

One or more semiconductor manufacturing methods and/or semiconductor arrangements are provided. In an embodiment, a silicon carbide (SiC) layer is provided. The SiC layer has a first portion overlying a second portion. The first portion has a first side distal the second portion and a second side proximal the second portion. The first portion is converted into a porous layer overlying the second portion. The porous layer has a first side distal the second portion and a second side proximal the second portion. The porous layer is removed to expose a first side of the second portion. After removing the porous layer, the first side of the second portion has a surface roughness less than a surface roughness of the first side of the first portion and/or less than a surface roughness of the first side of the porous layer.

Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor component using such a film for manufacturing semiconductor component, and a method for manufacturing an electronic component using such a film for electronic component manufacture. The film for component manufacture includes a base layer and an adhesive layer provided on one surface side of the base layer, and the Ra (μm) of the surface of one side of the base layer on which the adhesive layer is not provided is 0.1 to 2.0, and the Rz (μm) is 1.0 to 15. The method using the film for component manufacture includes a segmenting step, a pickup step, and an evaluation step prior to the pickup step.

A negative capacitance device includes a semiconductor layer. An interfacial layer is disposed over the semiconductor layer. An amorphous dielectric layer is disposed over the interfacial layer. A ferroelectric layer is disposed over the amorphous dielectric layer. A metal gate electrode is disposed over the ferroelectric layer. At least one of the following is true: the interfacial layer is doped; the amorphous dielectric layer has a nitridized outer surface; a diffusion-barrier layer is disposed between the amorphous dielectric layer and the ferroelectric layer; or a seed layer is disposed between the amorphous dielectric layer and the ferroelectric layer.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.