An apparatus is provided. The apparatus has a chuck having a first side configured to retain a superstrate or a template and a second side, an array of image sensors disposed at the second side of the chuck and spaced from the chuck, and an array of light sources disposed between the transparent chuck and the array of image sensors.

An apparatus is provided. The apparatus has a chuck having a first side configured to retain a superstrate or a template and a second side, an array of image sensors disposed at the second side of the chuck and spaced from the chuck, and an array of light sources disposed between the transparent chuck and the array of image sensors.

Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.

An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

A substrate holding apparatus is provided, which includes a top ring main body to which an elastic film having a surface that can suck a substrate can be attached, a first line communicating with a first area of the plurality of areas, a second line communicating with a second area different from the first area of the plurality of areas, a pressure adjuster that can pressurize the first area by feeding fluid into the first area through the first line and can generate negative pressure in the second area through the second line, and a determiner that performs determination of whether or not the substrate is sucked to the elastic film based on a volume of the fluid fed into the first area or a measurement value corresponding to pressure in the first area.

A substrate holding apparatus is provided, which includes a top ring main body to which an elastic film having a surface that can suck a substrate can be attached, a first line communicating with a first area of the plurality of areas, a second line communicating with a second area different from the first area of the plurality of areas, a pressure adjuster that can pressurize the first area by feeding fluid into the first area through the first line and can generate negative pressure in the second area through the second line, and a determiner that performs determination of whether or not the substrate is sucked to the elastic film based on a volume of the fluid fed into the first area or a measurement value corresponding to pressure in the first area.

The embodiments of the present disclosure relate to a packaging method, a panel assembly, a wafer package and a chip package. The semiconductor device packaging method includes: providing at least one wafer including a first surface and a second surface opposite to each other and a side surface connecting the first surface and the second surface, the first surface being an active surface; forming a connection portion on the side surface of the at least one wafer around the wafer, the wafer and the connection portion forming a panel assembly, the connection portion includes a third surface on the same side of the first surface of the wafer and a fourth surface on the same side as the second surface of the wafer, the third surface and the first surface forming a to-be-processed surface of the panel assembly. The packaging method of the embodiments of the present disclosure may improve packaging efficiency and utilization of a wafer.

A method of producing a wafer includes forming a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the ingot while positioning a focal point of the laser beam in the ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the ingot, generating ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and detecting when the wafer to be produced is peeled off the ingot based on a change that is detected in the height of an upper surface of the wafer to be produced by a height detecting unit positioned above the upper surface of the wafer to be produced across the water wafer interposed therebetween.

A SiC wafer is produced from a single crystal SiC ingot. A modified layer is formed by setting a focal point of a pulsed laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot while moving the ingot in a first direction perpendicular to a second direction where an off angle is formed, thereby forming a modified layer in the first direction inside the ingot and cracks propagating from the modified layer along a c-plane. A separation surface is formed by indexing the ingot in the second direction and applying the laser beam plural times to thereby form a separation surface inside the ingot. Part of the ingot is separated along the separation surface to thereby produce the wafer.

A robot apparatus may include an upper arm adapted to rotate about a first rotational axis and a forearm rotatably coupled to the upper arm at a second rotational axis. A first wrist member may be rotatably coupled to the forearm at a third rotation axis. A second wrist member may be rotatably coupled to the forearm at the third rotation axis. A first end effector may be coupled to the first wrist member and a second end effector may be coupled to the second wrist member. The first wrist member and the second wrist member may be configured to rotate about the third rotational axis between a first pitch and a second pitch as a function of extension of the robot apparatus. Other apparatus and methods are disclosed.