The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

A wafer surface treatment device and a method thereof are disclosed. The wafer surface treatment device includes a main body internally defining a treatment space; a movable door provided on one side of the main body; a gas atomizer provided in the treatment space; a heater provided in the treatment space; and a control unit connected to the gas atomizer and the heater.

A hydrogen fluoride vapor phase corrosion method comprises: introducing a prescribed vaporized organic liquid into a reaction chamber after a vapor phase hydrogen fluoride containing water reacts, in the reaction chamber, with a wafer; the prescribed vaporized organic liquid, and the water remaining on a surface of the wafer form an azeotropic mixture; and evaporating or volatilizing the azeotropic mixture from the surface of the wafer to carry it out.

There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

The disclosure provides a film surface treatment method and a film surface treatment device. By etching a surface of the film with hydrofluoric acid, substances on the surface of the film can be etched away; by cleaning the hydrofluoric acid on the surface, subjected to etching, of the film with a cleaning solution, residual hydrofluoric acid on the surface of the film can be removed, so that over etching to a film caused by the residual hydrofluoric acid can be avoided; and by oxidizing the surface, subjected to cleaning, of the film with ozone water, a compact and uniform oxide layer can be formed on the surface of the film. In this way, the effect of an ELA process can be improved.

An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF.sub.6/H.sub.2O or Ar/SF.sub.6/NH.sub.3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.