A method for forming a semiconductor structure includes the steps of providing a substrate having a first region and a second region, forming a plurality of semiconductor devices on the first region of the substrate, forming a planarization layer on the substrate and covering the semiconductor devices, wherein the planarization layer on the first region and the planarization layer on the second region have a step-height, performing a first CMP process to remove the step height of the planarization layer, and after the first CMP process, performing a curing process to convert the planarization layer into a porous low-k dielectric layer.

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

A method for making 3D nano-structure comprising at least two materials by spatially controlling the growth of the materials, is provided. Further, a method for making 3D nano-structure bound to a thermally labile substrate is provided. Composites, comprising a substrate bound to a 3D nano-structure, wherein the 3D nano-structure is arranged in a pattern are provided.

An apparatus for thermal treatment of dielectric films on substrates includes: a microwave applicator cavity and microwave power source; a workpiece to be heated in the cavity, having a porous coating on a selected substrate; and, an apparatus for introducing a controlled amount of a polar species into the porous coating immediately before heating by the microwave power. The interaction of the polar species with the microwaves enhances the efficiency of the process, to shorten process time and reduce thermal budget. A related method includes: depositing a porous film on a substrate; soft baking the film to a selected state of dryness; introducing a controlled amount of a polar species into the soft baked film; and, applying microwave energy to heat the film via interaction with the polar species.

A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

A method for manufacturing a semiconductor device includes forming a source/drain region on a semiconductor fin. The source/drain region is adjacent to a dummy gate. The method further includes forming a first dielectric layer over the source/drain region and the dummy gate. The first dielectric layer has a dielectric constant of 3.5 or less. The first dielectric layer may include boron nitride or silicon dioxide with Si-CH.sub.3 bonds.

The present disclosure provides a hydrophobic low-dielectric-constant film and a preparation method therefor. The low-dielectric-constant film is formed from one or more fluorine-containing compounds A by means of a plasma enhanced chemical vapor deposition method, and the one or more fluorine-containing compounds comprise a compound having the general formula C.sub.xSi.sub.yO.sub.mH.sub.nF.sub.2x+2y−n+2 or C.sub.xSi.sub.yO.sub.mH.sub.nF.sub.2x+2y−n, x being an integer from 1 to 20, y being an integer from 0 to 8, m being an integer from 0 to 6, and n being 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17 and 19. Thus, a nano-film having a low dielectric constant and good hydrophobicity is formed on the surface of a substrate.

The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: ##STR00001## where n is 12, 16, 18, 20, or 22, and X is CH.sub.3 or CH.sub.2CH.sub.3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film. Compared with existing ultra-low dielectric thin films, the obtained thin film has a lower dielectric constant (1.89), and is better in dielectric stability in a humid environment, simple to operate, and high in polymerization speed.