The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.

A manufacturing method of an indium tin oxide (ITO) thin film based on a solution method is disclosed. The manufacturing method includes: a step of providing an array substrate; a step of obtaining a dispersion solution by mixing ITO grains, an organic small molecule phase transfer agent, and an N-chlorosuccinimide (NCs) solution; a step of obtaining uniformly assembled ITO grains by coating the dispersion solution onto a passivation layer and baking to remove the organic small molecule phase transfer agent; and a step of obtaining the ITO thin film by annealing at an inert atmosphere to refine the ITO grains.

There is provided a technique that includes forming a film containing a first element and oxygen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a modifying agent to the substrate to form, on the substrate, an adsorption layer containing the modifying agent physically adsorbed on a surface of the substrate; (b) supplying a precursor containing the first element to the substrate and causing the precursor to react with the surface of the substrate to form a first layer containing the first element on the substrate; and (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.

A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

Provided is an electronic device including a lower material film, an upper material film on the lower material film, a two-dimensional electron gas between the lower material film and the upper material film, a source electrode on the upper material film, a drain electrode on the upper material film, and a gate electrode on the upper material film, wherein the upper material film includes a first portion in contact with the source electrode, a second portion in contact with the gate electrode, and a third portion in contact with the drain electrode, wherein a thickness of the second portion of the upper material film is greater than a thickness of the first portion of the upper material film and a thickness of the third portion of the upper material film, wherein the voltage drop and the threshold voltage are adjusted by adjusting the thicknesses of the first to third portions of the upper material film.

Provided is an electronic device including a first lower material film, a first upper material film on the first lower material film, a first two-dimensional electron gas between the first lower material film and the first upper material film, a second lower material film on the first upper material film, a second upper material film on the second lower material film, a second two-dimensional electron gas between the second lower material film and the second upper material film, a source electrode on the second upper material film, a drain electrode on the second upper material film, a gate insulating film on the second upper material film, and a gate electrode on the gate insulating film.

The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein. ##STR00001##

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.