A transistor device and the manufacturing methods are described. The device includes a gate structure having a gate layer and a ferroelectric layer, source and drain terminals, and a crystalline channel portion. The source and drain terminals are disposed at opposite sides of the gate structure. The crystalline channel portion extends between the source and drain terminals. The source and drain terminals are disposed on the crystalline channel portion and the gate structure is disposed on the crystalline channel portion. The crystalline channel portion includes a first material containing a Group III element and a Group V element, the gate layer includes a second material containing a Group III element and a rare-earth element, and the ferroelectric layer includes a third material containing a Group III element, a rare-earth element and a Group V element.

Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

A solar cell for a solar cell array with one or more grid on a surface thereof, wherein electrical connections are made to the grids in a plurality of locations positioned around the solar cell; and the electrical connections extend to one or more conductors located under the solar cell. The conductors located under the solar cell are buried within a substrate, and each of the conductors comprises a low resistance conducting path that distributes current from the solar cell. The conductors are loops, U-shaped, or have only up or down pathways. The solar cell comprises a full cell that has four cropped corners and the locations are in the cropped corners.

Described herein are rock salt substrates and methods of making thereof that are useful as epitaxial substrates for semiconducting materials, including ultra-wide bandgap materials. Advantageously, the described rock salt substrates may be useful as substrates for Group III (Al, Ga, In)—N substrate allowing for pseudomorphic growth of novel, desirable materials. The rock salt may be provided as a bulk material or deposited as a thin film. These substrates may allow for generation of high Al content semiconductor devices with ultra-wide bandgap and other useful properties.

Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

Photonic devices having a photonic waveguiding layer, and a cladding layer, disposed on the photonic waveguiding layer, and where the cladding section is a material comprising Scandium. The cladding layer may include a material comprising Al.sub.1-xSc.sub.xN material where 0<x≤0.45.

Photonic devices having a quantum well structure that includes a Group III-N material, and a Al.sub.1-xSc.sub.xN cladding layer disposed on the quantum well structure, where 0<x≤0.45, the Al.sub.1-xSc.sub.xN cladding layer having a lower refractive index than the index of refraction of the quantum well structure.

A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

Disclosed is a method for preparing a substrate relate to the field of semiconductors. The method comprises the following steps: S1, providing a reaction container in which a base substrate is mounted; S2, conducting a metal source into the reaction container, and forming a thin film layer on a surface of the base substrate, wherein a part of a surface of the base substrate is covered by the thin film layer, so that the base substrate is provided with an exposed surface that is not covered by the thin film layer; and S3, conducting a corrosive gas into the reaction container to form one or more recessed holes in at least a part of the exposed surface.

Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-Cr.sub.2O.sub.3, α-Fe.sub.2O.sub.3, α-Ti.sub.2O.sub.3, α-V.sub.2O.sub.3, and α-Rh.sub.2O.sub.3, or a solid solution containing two or more selected from the group consisting of α-Al.sub.2O.sub.3, α-Cr.sub.2O.sub.3, α-Fe.sub.2O.sub.3, α-Ti.sub.2O.sub.3, α-V.sub.2O.sub.3, and α-Rh.sub.2O.sub.3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.