A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20 or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm.sup.2, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 m or more and 100 m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Disclosed herein is a new and improved system and method for fabricating diamond films by first seeding a surface of a transparent substrate. A diamond layer that is at least one of nanocrystalline and ultrananocrystalline can be deposited upon the surface of the transparent substrate and both the diamond layer and the transparent substrate modified to incorporate substitutional atoms.

A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10.sup.?7?10.sup.?8 ?.Math.cm.sup.2, and the method has high repeatability.

A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The substrate includes a plurality of protrusions spaced apart from each other, and one of the plurality of graphene nanoribbons is on the substrate and between two adjacent protrusions. An interdigital electrode is placed on the graphene nanoribbon composite structure, and the interdigital electrode covers the plurality of protrusions and is electrically connected to the plurality of graphene nanoribbons.

A laminated body of an embodiment includes: a silicon layer; a first beryllium oxide layer on the silicon layer; and a diamond semiconductor layer on the first beryllium oxide layer.

Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

A stack of layers providing an ohmic contact with the semiconductor, a lower metal layer of the stack is disposed in direct contact with the semiconductor; and a radiation absorption control layer disposed over the lower layer for controlling an amount of the radiant energy to be absorbed in the radiation absorption control layer during exposure of the stack to the radiation during a process used to alloy the stack with the semiconductor to form the ohmic contact.

A compound semiconductor device includes: a compound semiconductor area including, at an upper most portion, a protective layer made of a compound semiconductor; and an ohmic electrode provided on the compound semiconductor area, the ohmic electrode being away from the protective layer in plan view and being not in contact with the protective layer.