Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

On a front surface of a semiconductor base, a first n.sup.-type drift region and a second n-type drift region are provided. A gate trench is provided that penetrates an n.sup.+-type source region and p-type base region, and reaches the second n-type drift region. Between adjacent gate trenches, a contact trench is provided that penetrates the n.sup.+-type source region and the p-type base region, and reaches a p-type semiconductor region, through the second n-type drift region. A source electrode embedded in the contact trench is in contact with the p-type semiconductor region at a bottom and corners of the contact trench, and forms a Schottky junction with the second n-type drift region at side walls of the contact trench. A depth of the contact trench is a depth by which a mathematical area of a part thereof forming the Schottky junction is a predetermined mathematical area or greater.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.

A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.