A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.

Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.

An object is to provide a semiconductor device that can prevent organic contamination of an electrode including a plurality of laminated metal layers. A semiconductor device includes: a semiconductor substrate; and an electrode including a plurality of layers laminated on a principal surface of the semiconductor substrate. The electrode includes: a first metal layer in contact with the principal surface of the semiconductor substrate, the first metal layer containing Al; an oxide layer formed on a surface of the first metal layer, the oxide layer containing a metal and oxygen; and a second metal layer formed on a surface of the oxide layer. Concentrations of the oxygen in the oxide layer are higher than or equal to 8.0×10.sup.21/cm.sup.3 and lower than or equal to 4.0×10.sup.22/cm.sup.3.

A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes a semiconductor substrate, an epitaxial layer grown on a side of the semiconductor substrate; a quantum dot transport layer disposed on the epitaxial layer; and a gate oxide layer disposed on the quantum dot transport layer. With this arrangement, the semiconductor device provided by the present disclosure may reduce a threshold voltage while ensuring gate electrode reliability.

A method of manufacturing a silicon carbide semiconductor device includes selectively forming a semiconductor region of a conductivity type at a first main surface of a semiconductor substrate containing silicon carbide; forming a nickel layer above the semiconductor region; ion-implanting aluminum in the nickel layer; performing a heat treatment to the nickel layer implanted with the aluminum to thereby form an ohmic contact layer in ohmic contact with the semiconductor region; forming a first electrode that is in contact with the ohmic contact layer, the semiconductor region, and the semiconductor substrate; and forming a second electrode on a second main surface of the semiconductor substrate.

A silicon carbide (carborundum) semiconductor device and a manufacturing method thereof. The manufacturing method of the silicon carbide semiconductor device comprises the following steps of: providing a semiconductor component structure on a silicon carbide substrate, the semiconductor component structure being formed on a front side of the silicon carbide substrate; and forming a multi-layer structure on a back side of the silicon carbide substrate, the multi-layer structure comprising a plurality of ohmic contact layers and a plurality of gettering material layers. By dispersing the gettering material into multiple layers, and by adjusting a thickness combination of the ohmic contact layer and the gettering material layer, even if the gettering material layer is relatively thin (thickness sufficient for balling), a content is still sufficient for gettering carbon and reducing carbon aggregation and accumulation.

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

A semiconductor device includes a semiconductor device provided on a semiconductor substrate and an ohmic electrode provided on a back surface of the semiconductor device and containing a nickel silicide and a molybdenum carbide, or the nickel silicide and a titanium carbide. The ohmic electrode is configured by first regions where a silicide is thick and second regions where the silicide is thin; a ratio of an arithmetic area of the second regions to an arithmetic area of the ohmic electrode is in a range from 10% to 30% in a plan view.