Method for manufacturing an electronic device, comprising the steps of: forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

According to an embodiment, provided is a semiconductor device including: a first electrode; a second electrode; and a silicon carbide layer disposed between the first electrode and the second electrode, the silicon carbide layer including: a first silicon carbide region of an n-type; and a second silicon carbide region disposed between the first silicon carbide region and the first electrode, the second silicon carbide being in contact with the first electrode, and the second silicon carbide containing one oxygen atom bonding with four silicon atoms.

A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

A semiconductor device includes a semiconductor layer including first and second electrode forming surfaces and side surface, an anode electrode formed on the first electrode forming surface, a cathode electrode formed on the second electrode forming surface; an insulating film continuously formed from the first electrode forming surface to the side surface so as to cover the first edge. The side surface of the semiconductor layer is covered with the insulating film, so that a leak current flowing along the side surface is reduced. Further, the side surface is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.

A method for fabricating a junction barrier Schottky diode device is disclosed. The junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.

In a method of manufacturing a silicon carbide semiconductor device that is a silicon carbide diode having a JBS structure including a mixture of a Schottky junction and a pn junction and that maintains low forward voltage through a SBD structure and enhances surge current capability, nickel silicide films are formed in an oxide film by self-alignment by causing a semiconductor substrate and a metal material film to react with one another through two sessions of heat treatment including a low-temperature heat treatment and a high-temperature heat treatment, the metal material film including sequentially a first nickel film, an aluminum film, and a second nickel film, the first nickel film being in contact with an entire area of a connecting region of a FLR and p-type regions respectively exposed in openings of the oxide film.

A Schottky barrier diode is provided. The Schottky barrier diode includes: an n+ type of substrate, an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate, a p type of region disposed on a side surface of the trench, a Schottky electrode disposed on the n− type of epitaxy layer and within the trench, and an ohmic electrode disposed on a second surface of the n+ type of substrate.

A semiconductor device having, in a plan view, a termination region surrounding an active region. The semiconductor device includes a semiconductor substrate containing silicon carbide, a first-conductivity-type region provided in the semiconductor substrate at its first main surface, a plurality of first second-conductivity-type regions selectively formed in the semiconductor substrate at its first main surface, a plurality of silicide films respectively in ohmic contact with the first second-conductivity-type regions, a first electrode that is in contact with the silicide films to form ohmic regions, with the first second-conductivity-type regions to form non-operating regions, and with the first-conductivity-type region to form Schottky regions, a second electrode provided at a second main surface of the semiconductor substrate, and a second second-conductivity-type region provided in the termination region. The ohmic regions, the non-operating regions and the Schottky regions are formed in the active region in a striped pattern. The second second-conductivity-type region connects the ohmic regions and the non-operating regions.

A semiconductor device including a silicon carbide semiconductor substrate having a first-conductivity-type region at its first main surface. The semiconductor device has, at the first main surface, a plurality of first second-conductivity-type regions and a second second-conductivity-type region selectively provided in the first-conductivity-type region, respectively in an active region and a connecting region of the semiconductor device, and an oxide film provided in a termination region of the semiconductor device and having an inner end that faces the active region. A first silicide film is in ohmic contact with the first second-conductivity-type regions. A second silicide film is in contact with the inner end of the oxide film and in ohmic contact with the second second-conductivity-type region. The semiconductor device has a first electrode including a titanium film and a metal electrode film stacked sequentially on the first main surface, and a second electrode provided at a second main surface.

A semiconductor component includes: gate structures extending into a silicon carbide body from a first surface and having a width along a first horizontal direction parallel to the first surface that is less than a vertical extent of the gate structures perpendicular to the first surface; contact structures extending into the silicon carbide body from the first surface, the gate and contact structures alternating along the first horizontal direction; shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures and are spaced apart from the gate structures along the first horizontal direction; and source regions between the first surface and body regions. The body regions form pn junctions with the source regions and include main sections adjoining the gate structures and contact sections adjoining the contact structures. A vertical extent of the contact structures is greater than the vertical extent of the gate structures.