A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

A semiconductor device includes a trench structure extending from a first surface into a semiconductor body composed of silicon carbide. The trench structure includes an electrode and between the electrode and the first surface a gate electrode. A shielding region adjoining the electrode forms a first pn junction with a drift structure formed in the semiconductor body. A Schottky contact is formed between the drift structure and a first contact structure.

A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

A semiconductor device including a silicon carbide semiconductor substrate having a first-conductivity-type region at its first main surface. The semiconductor device has, at the first main surface, a plurality of first second-conductivity-type regions and a second second-conductivity-type region selectively provided in the first-conductivity-type region, respectively in an active region and a connecting region of the semiconductor device, and an oxide film provided in a termination region of the semiconductor device and having an inner end that faces the active region. A first silicide film is in ohmic contact with the first second-conductivity-type regions. A second silicide film is in contact with the inner end of the oxide film and in ohmic contact with the second second-conductivity-type region. The semiconductor device has a first electrode including a titanium film and a metal electrode film stacked sequentially on the first main surface, and a second electrode provided at a second main surface.

A method for producing a semiconductor component includes: forming a silicon carbide substrate having a body layer formed on a section of a main layer, and a source layer formed on a section of the body layer; forming gate trenches and contact trenches extending through the source layer and the body layer, the gate trenches and contact trenches alternating along a first horizontal direction parallel to a first main surface of the silicon carbide substrate; forming a gate dielectric in the gate trenches; forming a metal structure which includes first sections adjoining the gate dielectric in the gate trenches and second sections in the contact trenches, the second sections adjoining body regions formed from sections of the body layer and source regions formed from sections of the source layer; and removing third sections of the metal structure that connect the first sections to the second sections.

A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

An embodiment relates to a semiconductor component, comprising a semiconductor body of a first conduction type comprising a voltage blocking layer; and islands of a second conductivity type on a contact surface; and a metal layer on the voltage blocking layer, wherein the metal layer and the voltage blocking layer includes a Schottky contact, and a first conductivity type layer comprising the first conduction type not in contact with the Schottky contact that is interspersed between the islands of the second conductivity type.

An n-type GaN layer, a p-type diffusion region formed by ion implantation and annealing in a part of the n-type layer, and a Schottky electrode are formed on the n-type layer. A region without the p-type region is defined as region A, and a region with the p-type region is defined as region B. In region A, an average density of each electron trap level of the n-type layer in a region having a depth of 0.8 m to 1.6 m on the n-type layer side is set so as to satisfy the predetermined conditions. In region B, an average density of each carrier trap level of the n-type layer in a region having a depth of 0.8 m to 1.6 m on the n-type layer side from a boundary between the n-type layer and the p-type diffusion region is set so as to satisfy the predetermined conditions.

In one aspect, a semiconductor device may include a semiconductor substrate formed of silicon carbide; and an edge termination having a first metal layer and a second metal layer, wherein the first metal layer is deposited and patterned spacedly on the semiconductor substrate and the second metal layer is deposited and patterned onto at least a portion of the spaced first metal layer and onto the semiconductor substrate between said spaced first metal layer, and wherein the first metal layer comprises a high work function metal, while the second metal layer comprises a low work function metal. In one embodiment, the high work function metal includes Silver, Aluminum, Chromium, Nickel, and Gold; and the low work function metal includes Titanium and Nickel Silicide.