A method of manufacturing a semiconductor device includes: performing laser annealing on a silicon substrate in which point defects are generated due to ion implantation of a dopant to activate the dopant; and growing the point defects into {311} defects or dislocation loops and using the {311} defects or the dislocation loops as lifetime killers.

A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.

A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lower surface region of a first conductivity type or a second conductivity type, wherein a shallowest doping concentration peak closest to the lower surface of the semiconductor substrate among the doping concentration peaks of the buffer region is a concentration peak of a hydrogen donor having a concentration higher than the other doping concentration peaks, and a ratio A/B of a peak concentration A of the shallowest doping concentration peak and an average peak concentration B of the other doping concentration peaks is 200 or less.

Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type which is disposed on the lower surface side of the semiconductor substrate and contains a hydrogen donor, and in which a doping concentration distribution in a depth direction of the semiconductor substrate has a single first doping concentration peak; a high-concentration region of a first conductivity type which is disposed between the buffer region and the upper surface of the semiconductor substrate, contains a hydrogen donor, and has a donor concentration higher than a bulk donor concentration; and a lower surface region of a first conductivity type or a second conductivity type which is disposed between the buffer region and a lower surface of the semiconductor substrate, and has a doping concentration higher than the high-concentration region.

A semiconductor device according to the present disclosure includes: a semiconductor substrate with a first main surface and a second main surface; a drift layer of a first conductivity type formed in the semiconductor substrate; a first impurity diffusion layer of a second conductivity type formed on the drift layer to be closer to the first main surface; and a buffer layer of the first conductivity type formed on the drift layer to be closer to the second main surface and higher in peak impurity concentration than the drift layer. The drift layer has a first trap, a second trap, and a third trap, whose energy level each is lower than energy at a bottom of a conduction band by 0.246 eV, 0.349 eV, and 0.470 eV. The second trap has trap density of equal to or greater than 2.0×10.sup.11 cm.sup.−3.

A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. A first depth of the first semiconductor layer from the back surface of the semiconductor substrate in the transistor portions is greater than a second depth of the first semiconductor layer from the back surface of the semiconductor substrate in the diode portions.

There is provided a reverse-conducting IGBT having an improved trade-off relationship between recovery losses and a forward voltage drop during diode operation. A first recombination region is provided at least in a region of a sixth semiconductor layer which is at a second main surface side of a seventh semiconductor layer and which overlaps the seventh semiconductor layer as seen in plan view.