The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl.sub.3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt).sub.3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

An impurity-doping apparatus is provided with: a supporting plate which supports a semiconductor substrate; a wall-like block disposed above the supporting plate floating away from the semiconductor substrate, the wall-like block implements a recess inside so as to establish a space for a solution region containing impurity elements, the solution region is localized on an upper surface of the semiconductor substrate, the upper surface being opposite to an bottom surface facing to the supporting plate; and a laser optical system, configured to irradiate a laser beam onto the upper surface of the semiconductor substrate, through the solution region surrounded by the wall-like block, wherein the impurity elements are doped into a part of the semiconductor substrate by irradiation of the laser beam.

Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon carbonitride material, silicon oxycarbide material, silicon carbon-oxynitride, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.

A diffusing agent composition that can efficiently form a thin film in which an impurity diffusion component can be diffused into a semiconductor substrate at a higher concentration than a conventional one and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusion component and a silane coupling agent the silane coupling agent including a group which generates a silanol group by hydrolysis and alkyl groups and at least one of the alkyl groups includes, in a chain and/or at an end, at least one amino group selected from a primary amino group, a secondary amino group and a tertiary amino group.

Disclosed herein is a method for doping a substrate, comprising disposing a composition comprising a dopant-containing copolymer and a solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300 C. for 0.1 second to 24 hours to diffuse a dopant into the substrate; wherein the dopant-containing copolymer comprises a non-dopant-containing polymer and a dopant-containing polymer; and where the dopant-containing polymer is a polymer having a covalently or ionically bound dopant atom and is present in a smaller volume fraction than the non-dopant-containing polymer.

To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane. A purification method for purifying a liquid, which comprises a step in which some or all of the liquid is caused to permeate through a polyimide and/or polyamide imide porous membrane having communicating pores from one side to the other side by means of differential pressure, and wherein the liquid is a silylating agent liquid, a film forming material or a diffusing agent composition that is used for diffusing a dopant into a semiconductor substrate.

Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.