A method of forming NFET S/D structures with multiple layers, with consecutive epi-SiP layers being doped at increasing dosages of P and the resulting device are provided. Embodiments include forming multiple epi-Si layers in each S/D cavity of a NFET; and performing in-situ doping of P for each epi-Si layer, wherein consecutive epi-Si layers are doped at increasing dosages of P.

The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

A p-type impurity diffusion composition is provided which makes it possible to improve storage stability of a coating liquid, and to achieve uniform diffusion of the coating liquid on a semiconductor substrate. The p-type impurity diffusion composition includes (A) a group-13 element compound, (B) a hydroxyl-group-containing polymer, and (C) an organic solvent, (Cl) a cyclic ester solvent being contained in the organic solvent.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

A diffusion agent composition used in forming an impurity diffusion agent layer on a semiconductor substrate, and containing an impurity diffusion component, a silicon compound, and a solvent containing a solvent having a boiling point of 100 C. or less, a solvent having a boiling point of 120-180 C., and a solvent having a boiling point of 300 C.

A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a contact at a second side of the semiconductor substrate opposite to the first side.

Aspects of the present disclosure include fabricating integrated circuit (IC) structures using a boron etch-stop layer, and IC structures with a boron-rich region therein. Methods of forming an IC structure according to the present disclosure can include: growing a conductive epitaxial layer on an upper surface of a semiconductor element; forming a boron etch-stop layer directly on an upper surface of the conductive epitaxial layer; forming an insulator on the boron etch-stop layer; forming an opening within the insulator to expose an upper surface of the boron etch-stop layer; annealing the boron etch-stop layer to drive boron into the conductive epitaxial layer, such that the boron etch-stop layer becomes a boron-rich region; and forming a contact to the boron-rich region within the opening, such that the contact is electrically connected to the semiconductor element through at least the conductive epitaxial layer.

A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.